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ICSICT 2008 CommitteesYangyuan Wang, Peking University, China Chenming Hu, University of California, Berkeley, USA Zhijian Li, Tsinghua University, China Dexin Wu, Institute of Microelectronics of Chinese Academy of Science, China Chih Tang Sah, University of Florida, USA Ilesanmi Adesida, University of Illinois, USA Yasuhiko Arakawa, University of Tokyo, Japan Ronald L. Carter, University of Texas at Arlington, USA Philip Chan, Hong Kong University of Science and Technology, Hongkong,China Xingbi Chen, University of Electronic Science and Technology of China, China Nathan W. Cheung, University of California, Berkeley, USA Steve S. Chung, National Chiao Tung University, Taiwan, China Jason Cong, University of California，Los Angeles, USA Thomas Gessner, Chemnitz University of Technology,Fraunhofer IZM, Germany Ruqi Han, Peking University, China Chang Huang, China Aerospace Corporation, China Ping K. Ko, Wearnes Technology(Pte), Singapore Ernest S. Kuh, University of California, Berkeley, USA Dim-Lee Kwong, Institute of Microelectronics, Singapore Kei May Lau, Hongkong University of Science and Technology, Hongkong,China Ming-Ren Lin, AMD, USA Junru Ma, State Administration of Foreign Expert Affairs, China T.P. Ma, Yale University, USA James E. Morris, Portland State University, USA Yoshio Nishi, Stanford University, USA George Rozgonyi, North Carolina State University, USA Gang Ruan, Fudan University, China Xubang Shen, Xi'an microelectronic Technology Institute, China Michael Shur, Rensselaer Polytechnic Institute, USA Jiaguang Sun, Natural Science Foundation of China, China Ljiljana Trajkovic, Simon Fraser University, Canada King-Ning Tu, University of California，Los Angeles, USA Kang L. Wang, University of California,Los Angeles, USA Shoujue Wang, Institute of Semiconductors,CAS, China Shouwu Wang, Institute of Semiconductors,CAS, China Zhanguo Wang, Institute of Semiconductors,CAS, China Jeff Welser, IBM T.J. Watson Research Center, USA Philip Wong, Stanford University, USA Jianbai Xia, Institute of Semiconductors,CAS, China Sishen Xie, Institute of Physics,CAS, China Juyan Xu, Chinese Electronics Technology Group Company, China Xiaolang Yan, Zhejiang University, China Cary Y. Yang, Santa Clara University, USA Paul Yu, University of California, San Diego, USA Zhongyu Yu, Ministry of Information Industry, China Houzhi Zheng, Institute of Semiconductors,CAS, China Youdou Zheng, Nanjing Univeristy, China Shichang Zou, Grace Semiconductor Manufacturing Corporation, China Ru Huang, Peking University, China Juin J. Liou, University of Central Florida, USA Hiroshi Iwai, Tokyo Institute of Technology, Japan Cor Claeys, IMEC, Belgium Jason Woo, University of California, Los Angeles, USA Donggun Park, Samsung Electronics, Korea Jun Xu, Tsinghua University, China Ibrahim Abdel-Motaleb, Northern Illinois University, USA S. Ashok, Pennsylvania State University, USA Francis Balestra , IMEP, France Jin Cai, IBM T.J. Watson Research Center, USA Yu Cao, Arizona State University, USA Mansun Chan, Hongkong University of Science and Technology, Hongkong,China Arun N. Chandorkar, Indian Institute of Technology, India Ko-Min Chang, Freescale, Austin, TX, USA Guican Chen, Xi'an Jiaotong University, China Hongda Chen, Institute of Semiconductors，CAS, China Hongyi Chen, Tsinghua University, China Kevin J. Chen, Hong Kong University of Science and Technology, Hong Kong,China Shoumian Chen, Shanghai IC R&D Center, China Yonghai Chen, Institute of Semiconductors,CAS, China Ming-Cheng Cheng, Clarkson University, USA Yuhua Cheng, Peking University, China Min-hwa Chi, Semiconductor Manufacturing International Corp., China T. K. Chiang, South Taiwan University of Technology, Taiwan,China Albert Chin, National Chiao Tung University, Taiwan,China Yun Chiu, University of Illinois, USA Stephen Y. Chou, Princeton University, USA Paul K. Chu, City University of Hong Kong, Hongkong,China Jamal Deen, McMaster University, Canada Simon Deleonibus, Leti, France Shijin Ding, Fudan University, China Zhongliang Deng, Beijing University of Posts and Telecomunications, China Shurong Dong, Zhejiang University, China Sunfei Fang, IBM, USA David Gao, Semiconductor Manufacturing International Corp., China Deyuan Gao, Northwestern Polytechnical university, China Hang Guo, Xiamen University, China Yue Hao, Xidian Univeristy, China Ching-Sung Ho, Promos Technology, Taiwan,China Xianlong Hong, Tsinghua University, China David P. Huang, Praxair, USA Qing-an Huang, Southeast University, China K. Itoh, Hitachi, Japan Jinfeng Kang, Peking University, China James B. Kuo, National Taiwan University, Taiwan,China Kae-Dal Kwack, Hanyang University, Korea Zongsheng Lai, East China Normal University, China Kwyro Lee, Korea Advanced Institute of Science and Technology, Korea Yungchun Lee, National Cheng Kung University, Taiwan,China Bingzong Li, Fudan University, China Larry B. Li, UWAVE Technology, USA Mingfu Li, Fudan University, China Wen J. Li, Chinese University of Hong Kong , Hong Kong,China Xinxin Li, Shanghai Institute of Microsystem and Information Technology,CAS, China zhihong li, Peking University, China Yong Lian, National University of Singapore, Singapore Yinyin Lin, Fudan University, China Ming Liu, Institute of Microelectronics,CAS, China Rich Liu, Macronix International Company, Taiwan,China Xiaoyan Liu, Peking University, China Zhongli Liu, Institute of Semiconductors,CAS, China Timwah Luk, Fairchild Semiconductor, USA James Ma, ProPlus Design Solutions, USA Junfa Mao, Shanghai Jiaotong University, China Kristin De Meyer, IMEC, Belgium Bunji Mizuno, UJT Lab, Japan Hiroshi Mizuta, University of Southampton, Japan Philip K.T. Mok, Hong Kong University of Science and Technology, Hongkong,China Hisayo S. Momose, Toshiba, Japan Sreedhar Natarajan, TSMC Design Technology Canada Inc., Canada Wai Tung Ng, University of Toronto, Canada Guofu Niu, Auburn University, USA Hideki Oka, Fujitsu Laboratories Ltd., Japan Tong-Chern Ong, Taiwan Semiconductor Manufaturing Co., Taiwan,China Adelmo Ortiz-Conde, Simon Bolivar University, Venezuela Mikael Ostling, KTH Information and Communication Technology, Sweden Sung Min Park, Ewha Womans University, Korea Young-Kwan Park, Samsung, Korea Steve Pearton, University of Florida, USA KinLeong Pey, Nanyang Technology University, Singapore Junyan Ren, Fudan University, China Tianling Ren, Tsinghua University, China Guo-Ping Ru, Fudan University, China Heiner Ryssel, Fraunhofer IISB, Germany Samar Saha, Silicon Storage Technology Inc., USA E. Sangiorgi, University of Bologna, Italy Mohamad Sawan, Ecole Polytechnique de Montreal, Canada Frank Schwierz, Technical University Ilmenau, Germany Siegfried Selberherr, Technique University Wien, Austria Bo Shen, Peking University, China Yi Shi, Nanjing University, China Yin Shi, Institute of Semiconductors, CAS, China Zheng Shi, Zhejiang University, China Zhitang Song, Shanghai Institute of Microsystem and Information Technology,CAS, China Thomas Skotnicki, STMicroelectronics, France Nino Stojadinovic, University of Nis, Yugoslavia Yihe Sun, Tsinghua University, China Ting-Ao Tang, Fudan University, China Norman C. Tien, Case Western Reserve University, USA Ming-Jinn Tsai, Industrial Technology Research Institute of Taiwan, Taiwan,China Hsing-Huang Tseng, SEMATECH, USA James E. Vinson, Intersil Corp., USA Dawn Wang, IBM, New York, USA Xiaoliang Wang, Institute of Semiconductors,CAS, China Yan Wang, Tsinghua University, China Yeong-Her Wang, National Cheng Kung University, Taiwan,China Yuelin Wang, Shanghai Institute of Microsystem and Information Technology, CAS, China Zhigong Wang, Southeast University, China Zhihua Wang, Tsinghua University, China Hei Wong, City University of Hong Kong, Hongkong,China Man Wong, Hong Kong University of Science and Technology, Hongkong,China S.Simon Wong, Stanford University, USA Waisum Wong, SMIC, China Hanming Wu, SMIC, China Jeff Wu, Texas Instruments, USA Shanhong Xia, Institute of Electronics, CAS, China Qi Xiang, Altera Corporation, USA Huikai Xie, University of Florida , USA Deren Yang, Zhejiang University, China Liwu Yang, SMIC, China Wen-Kuan Yeh, National University of Kaohsiung, Taiwan,China Yee-Chia Yeo, National University of Singapore, Singapore Hoi-Jun Yoo, Korea Advanced Institute of Science and Technology, Korea Makoto Yoshimi, Soitec Asia, Japan Bin Yu, University of California,Mountain View, USA Dunshan Yu, Peking University, China Shaofeng Yu, Texas Instruments, USA Zhiping Yu, Tsinghua University, China Xuan Zeng, Fudan University, China Bo Zhang, University of Electronic Science and Technology of China, China Dacheng Zhang, Peking University, China Wei Zhang, Fudan University, China Yimen Zhang, Xidian Univeristy, China Peter Zhao, ProMOS, Taiwan,China Yuanfu Zhao, Beijing Microelectronics Technology Institute, China Chongwu Zhou, University of Southern California, USA Xing Zhou, Nanyang Technology University, Singapore Dazhong Zhu, Zhejiang University, China Xuecheng Zou, Huazhong University of Science and Technology, China Mengqi Zhou, Chinese Institute of Electronics, China Bin Zhao, Freescale Semiconductor, Inc., USA Tianchun Ye, Institute of Microelectronics of Chinese Academy of Science, China Xing Zhang, Peking University, China Albert Wang, University of California, Riverside, USA Kanyu Cao, Quintic Corporation, USA Z. Charles Cheng, AmberWave Systems, USA Mark Ding, SEMI China, China Songlin Feng, Shanghai Institute of Microsystem and Information Technology,CAS, China Yilong Hao, Peking University, China Jie He, National Natural Science Foundation of China, China Yiping Huang, Fudan University, China Yulong Jiang, Fudan University, China Jinmin Li, Institute of Semiconductors,CAS, China Yanhe Li, Tsinghua University, China Youbin Li, Chinese Electronics Technology Group Company, China Sheng Liang, Beijing Municipal Bureau of Industrial Development, China Dick.L. Liu, Synopsys,Inc., China Weiping Liu, CEC Huada Electronic Design Co., Ltd., China Xinyu Liu, Institute of Microelectronics,CAS, China FuChang Lo, SMIC, China Bangxian Mo, Peking University, China He Qian, Samsung Semiconductor (China) R&D Co., China Longxing Shi, Southeast University, China Zhihong Shi, Chinese Electronics Technology Group Company, China Lingling Sun, Hangzhou Dianzi University, China Fred van Roosmalen , NXP Semiconductors, Netherlands Xingang Wang, Skywork Solutions, USA Liji Wu, Tsinghua Shanghai Microelectronics Center, China Wengang Wu, Peking University, China Yang Xia, Institute of Semiconductors,CAS, China Shiliu Xu, Sichuan Institute of Solid-state Circuits, China Kewu Yang, The 13th Research Institute of The Ministry of Electronics Industry, China Simon Yang, Charter, Singapore Darrin Young, Case Western Reserve University, USA Min Yu, Peking University, China Haixia Zhang, Peking University, China Wendong Zhang, North University of China, China Minzheng Zheng, Ministry of Information Industry, China Min Yu, Peking University, China |
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