康晋锋,北京大学信息学院教授,北京大学上海微电子研究院副院长。1984年毕业于大连工学院物理系获理学学士;1984年至1989年在山西省分析测试中心任助理工程师;1989年至1995年在北京大学计算机系攻读硕士和博士研究生,并分别于1992和1995年获理学硕士和理学博士学位;1996年至1997年,在北京大学微电子所从事博士后研究工作;1997开始在北京大学微电子所任副教授,2001年8月开始任教授。2002年至2003年受邀以访问教授(Visiting Professor)身份在新加坡国立大学半导体纳米器件实验室(SNDL)从事合作研究一年。
曾先后在新型存储器技术;新型高K栅介质/金属栅材料与CMOS器件集成技术;ULSI器件模型、结构和可靠性技术;高温超导与介质材料薄膜技术及其应用等领域开展研究工作,取得具有国际先进水平的创新性研究成果。代表性成果包括:在新型的电阻存储器(RRAM)技术研究方面,针对RRAM技术发展的瓶颈问题,提出了关于氧化物电阻存储器(RRAM)阻变机理的统一模型(VLSI2008),阐明了

双极型氧化物RRAM器件阻变行为的物理起源。以此为基础建立了可定量描述和预测RRAM阻变性能的物理模型(IEDM2008),提出并演示了可有效改进RRAM器件性能一致性的技术解决方案(VLSI2009),这些创新成果的取得,对RRAM技术研究、发展和应用具有重要的理论基础和指导意义:在高K/金属栅集成技术研究方面,合作提出了具有极好热稳定性的金属栅/高-K栅结构(IEDM2003),并利用与CMOS工艺完全兼容的“gate-first”工艺制备了EOT<0.75nm的MOS电容和EOT<1nm的MOSFET器件,在性能指标达到当时国际最好水平,并在有效解决高-K /金属栅器件所面临的同时实现高迁移率、高可靠性和低EOT之间矛盾的研究方面取得显著进展。提出了并演示了双金属栅/高K栅介质CMOS器件工艺集成技术方案,该技术方案可同时满足亚45nm CMOS技术高性能、高可靠性、和双金属栅功函数调制等性能指标需求;作为课题组长,主持完成了国家863计划重大专项课题 “0.09微米CMOS集成电路大生产工艺与可制造性”的研究,使我国集成电路制造技术获得了3-4代的跨越,成为掌握国际最先进CMOS集成电路大生产制造技术的少数国家和地区之一;
在本领域核心期刊和学术会议,包括VLSI、IEDM会议和IEEE EDL, IEEE Transaction on Electron Devices, Appl. Pyhs. Lett.等刊物发表论文100余篇。先后获得国家科技进步二等奖、教育部科技进步一等奖、北京市技术发明一等奖等奖励。同时,作为课题负责人先后主持完成了国家863计划重大专项课题、国家973项目课题、国家自然科学基金项目等研究任务。 目前主要的研究领域包括:新型存储器(RRAM)材料和器件集成技术;金属栅/高K栅介质与CMOS器件集成技术; ULSI器件和电路集成和可靠性技术;新型太阳能电池技术等。

主要论著 研究领域 研究项目 讲授课程 著作论文

主要论著(选)

    1. B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X.Y. Liu, Y. Wang, R.Q. Han, J.F. Kang, B. Yu, Y.Y. Wang, Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology. Symposium on VLSI technology (VLSI2009), (Kyoto, Japan, June,14-18, 2009), p.30.
    2. B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, *J.F. Kang, B. Yu?, Y.Y. Wang, “Oxide-Based RRAM Switching Mechanism: A New Ion Transport Recombination Model”, 2008 Int Elect. Devices Meeting (IEDM2008), San Francisco, Dec. 15-17, 2008
    3. N. Xu, B. Gao, L.F. Liu, Bing Sun, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “A unified physical model of switching behavior in oxide-based RRAM”, 2008 Symposium on VLSI Technology (VLSI2008) (June 17-19, 2008, Hawaii, USA), p.100, 2008
    4. X. Sun, B. Sun, L.F. Liu, N. Xu, X.Y. Liu, R.Q. Han, J.F. Kang, G.C. Xiong, T.P. Ma. Resistive switching in CeOx films for nonvolatile memory application. IEEE Electron Device Lett., 30(4), pp.334-336, Apr. 2009.
    5. Yang JF, Yang JQ, Yan BG, G. Du, X.Y. Liu, R.Q. Han, *J.F. Kang, C.C. Liao, Z.H.Gan, M. Liao, J.P. Wang, W, Wong, “Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors”, Appl. Phys. Lett., Vol.94(8), 082103, FEB 23 2009
    6. J.F. Yang, Baoguang Yan, Xiaoyan Liu, Ruqi Han, Jinfeng Kang*, et al, “Poststress recovery mechanism of the negative bias temperature instability based on dispersive transport”, Appl. Phys. Lett. 90, p082908, 22 Feb 2007
    7. J.F. Kang, et al, “Improved Electrical and Reliability Characteristics of HfN/HfO2 Gated nMOSFET with 0.95 nm EOT Fabricated Using a Gate-First Process”, IEEE Electron Device Letters, VOL. 26, pp.237 - 239, April 2005
    8. J.F. Kang, H.Y. Yu, C. Ren, M.-F. Li, D.S.H. Chan, X.Y. Liu, and D.-L. Kwong, “Ultra-thin HfO2 (EOT<0.75nm) Gate Stack With TaN/HfN Electrodes Fabricated Using A High-Temperature Process”, Electrochemical and Solid-State Letters 8 (11): G311-G313 2005
    9. N. Sa, J.F. Kang*, H. Yang, X.Y. Liu, Y.D. He, R.Q. Han, C. Ren, H.Y. Yu, D.S.H. Chan, D.-L. Kwong, “Mechanism of Positive-Bias Temperature Instability in Sub-1 nm TaN/HfN/HfO2 Gate Stack with Low Preexisting Traps”, IEEE Electron Device Lett. 26(9), pp.610-612, Sept. 2005
    10. J.F. Kang, et al, “Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering”, Appl. Phys. Lett., 84 (9): 1588-1590 MAR 1 2004


    研究领域
    1. 新型存储器技术
    集成化芯片系统(SOC:System on Chip)是当今微电子技术最重要的发展方向之一。高性能的嵌入式存储器是SOC的重要组成部分,随着芯片的处理能力越来越强,对嵌入式存储器的要求也越来越高。此外,随着移动电话、笔记本电脑、数码相机等现代便携式电子器件和智能IC卡的迅速发展和普及,人们对非挥发性存储器的需求日益增加,对其性能的要求也越来越高。同时,目前以DRAM/SRAM和Flash为代表的传统存储器技术将面临其发展的技术物理极限,需要研究开发新一代的替代存储器技术。目前在研的新一代的替代存储器技术中包括:电荷陷阱型存储器(Charge Trapping Memory, CTM)、铁电存储器(Ferroelectric Random Access Memory,FRAM)、磁阻存储器(Magnetoresistive Random Access Memory, MRAM)、相变存储器(Phase-change Random Access Memory,PRAM)、电阻存储器(Resistance Random Access Memory,RPRAM)等新型存储器器件,随着研究的深入,这些技术都取得了不同程度的进展,具有成为传统存储器替代技术的潜力。其中,RRAM技术,作为新一代替代存储器技术家族的新成员,RRAM研究呈现出突飞猛进和超越其它替代技术的发展态势,特别是,其器件开关速度、工作电压、按比例缩小能力、耐久力(Endurance)、数据保持能力等性能指标表现出兼具DRAM的高速性和NVM 的非挥发性的能力,具有成为通用(Universal)存储器的潜力。目前制约RRAM技术发展和应用的主要瓶颈之一是发生阻变效应的物理机制尚不清楚;同时, RRAM 器件在性能稳定性、一致性、可重复性、数据保持性等方面都存在问题,如何控制和改进这些仍面临巨大的挑战。
    本研究将针对RRAM存储器技术的需求和发展瓶颈问题,利用我们在RRAM技术材、器件结构、物理机理等方面的研究基础,研究解决高效RRAM器件的材料、结构及其集成制备工艺等关键的物理和技术问题,为RRAM技术的发展和应用提供科学和技术基础。

    2. K /金属栅CMOS集成技术
    微电子技术在按照器件特征尺寸缩小和集成度提高的规律发展中,作为主流器件的CMOS,为了抑制短沟效应,维持好的器件特性,其栅介质的等效栅氧化层厚度(EOT)也相应减薄。然而,但集成电路技术进入到45nm技术时代以后,为了满足器件和电路性能的需求,在CMOS器件中采用高K栅介质与金属栅电极材料替代传统的SiO2栅介质和多晶硅栅电极材料将成为必要。这是因为,在亚45nm技术代以后,高性能CMOS器件的等效氧化层厚度(EOT)需要在1 nm以下,如果仍然采用传统的SiO2栅介质层,则会由于显著的量子直接隧穿效应,产生不可接受的高栅泄漏电流。如若采用新型的高K/金属栅材料,则在相同的EOT下,采用较厚的物理厚度,从而有效抑制穿过栅介质层的量子直接隧穿效应和由此产生的高的栅泄漏电流和功耗。理论和实验研究表明,采用HfO2高K栅介质层替代SiO2后,栅泄漏电流密度至少可减小4个数量级。在高K/金属栅CMOS器件设计中,为了实现CMOS器件的高速、低压、低功耗工作,通常要求其NMOSFET栅电极功函数在~4.1eV,PMOSFET栅电极功函数在~5eV,即采用所谓的双金属栅技术。
    目前,国际上已初步完成高K栅介质材料的选择,研究重点逐步集中在Hf基高K介质材料方面。同时,功函数在4.2eV~5.1eV范围可调的金属材料体系也已被成功演示。但是,将高K栅介质材料与金属栅电极材料集成到CMOS器件中仍然面临一系列的技术挑战,这些挑战主要包括:1)由于费米钉扎效应(Fermi Pinning Effect)作用,需要采取有效的技术途径,才能实现双金属栅技术要求的功函数;2)高K MOSFET中存在本征的迁移率下降效应,需要采取有效措施,才能满足技术需求;3)金属栅/高K栅介质EOT、栅泄漏电流的热稳定性问题;4)金属栅/高K栅介质的可靠性问题。实验显示,由于费米钉扎效应的作用,金属栅的费米能级被钉扎Si禁带中央附近,这使得各种金属栅电极功函数均被钉扎在4.6eV附近, 无法实现双金属栅的NMOS和PMOS器件所要求的阈值电压值。研究发现,金属栅的费米钉扎效应与金属栅与栅介质的界面特征有关,但对其中具体的物理机制和可能的解决途径有待深入研究。因此,深入研究和掌握引起高K/金属栅CMOS器件性能下降的各种物理机制,提出合适的技术解决方案是非常重要的研究课题。
    因此,本研究针对可以满足SOC高速、低压、低功耗应用需求的高K/金属栅CMOS器件集成工艺中遇到的引起器件性能退化的技术难题,提出解决这些技术困难的可能途径和技术路线。将为适于SOC的高速、低压、低功耗器件的发展奠定基础。

    3. 纳米CMOS器件模型模拟和可靠性技术研究
    微电子技术发展的目标是不断地提高集成电路和系统的性能价格比,提高系统性能价格比最有效的途径就是不断缩小特征尺寸,提高集成度。自1958年集成电路发明以来,集成电路芯片的发展基本上遵循了Intel公司创始人之一的Gordon E. Moore 1965年预言的摩尔定律,即每隔三年集成度增加4倍,特征尺寸缩小倍。据预测,在今后的十多年内,微电子技术的这种发展趋势还将继续下去,在21世纪前半叶,微电子产业仍将以尺寸不断缩小的硅基CMOS工艺技术为主流。
    目前65nm技术已发展成为主流技术,32nm技术也将实现量产。本研究方向将针对65nm~32nm大生产技术的开发和应用的需求,在新型集成电路工艺和集成技术如应力Si技术、器件的模型模拟、器件和电路的可靠性分析和评测、可制造性设计和验证等方面开展研究工作。

    4. 新型太阳能电池技术
    能源短缺和环境污染愈来愈成为制约未来社会可持续发展的瓶颈,作为清洁、绿色、可再生能源能源的代表,太阳能光伏发电技术和产业正逐渐进入能源产业结构,成为未来基础能源的重要组成部分,太阳能电池正成为人类解决未来能源问题的途径之一。
    光伏(PV)太阳能技术的主要吸引力在于通过太阳能技术发出的电是无污染的、可再生的。但发电成本和“绿色”的生产制造方式等问题成为当前太阳能电池技术和产业面临着的重大挑战。一方面,其居高不下的成本是传统的火电、水电成本的5倍以上,与传统电力相比,在价格上缺乏竞争力;另一方面,在制造晶体硅太阳能电池板过程中产生的污染和能耗跟天然气或煤发电相当,气体减排和安全处理光伏制造副产品的问题,成为整个行业需要迅速解决的问题。如果太阳能电池的“绿色”制造问题不解决,太阳能电池则会因制造过程中产生的污染使无污染绿色发电给环境带来的好处被抵消,影响太阳能电池技术应用和发展。
    目前,占据市场85%以上的晶体硅太阳能电池技术存在的成本和绿色制造等问题根源,主要是由于大量采用硅材料引起的。采用可大量减少晶体硅材料的用量或采用低成本、绿色制造的新材料新型太阳能电池技术,是从根本上解决当前光伏太阳能电池技术和产业发展面临问题的有效途径,也代表了未来太阳能电池技术发展的方向。其中,非晶硅薄膜电池、染料敏化电池、有机薄膜电池具有成本低、绿色制造、原材料来源和应用范围广泛等特点,成为新一代太阳能电池技术的主要候选者。但这些技术在转换效率、可靠性、大面积集成制造方面的问题。
    本研究方向将针对新一代薄膜太阳能电池技术中的瓶颈问题,拟从基础研究入手,结合微电子技术在器件结构设计和解决可靠性和大规模集成制造问题方面的优势,开展高效、低成本、高可靠性大面积薄膜电池关键技术的研究工作,力图获得实现高效、低成本、高可靠性、大面积制造的薄膜太阳能电池技术解决方案,为新型薄膜太阳能电池技术的应用奠定理论和技术基础。



    研究项目

    在研项目:
    1. 973计划项目:<<纳米尺度硅集成电路器件与工艺基础研究>>课题:“低功耗高可靠的新型非挥发性存储器件研究”2006.6~2010.5
    2863计划项目:《新型高密度半导体存储材料与技术》课题:“电阻随机存储器存储材料与关键技术”2008.3~2011.2
    3. 上海市纳米科技专项课题:“低成本环保型太阳能电池纳米电极材料与结构设计”2010.1~2012.12

    完成的项目:
    1. 863 重大专项课题: 0.09微米CMOS集成电路大生产工艺与可制造性, 2003年6月~2005年11月
    针对90nm和65nmCMOS集成电路大生产技术中的关键问题开展研究,在解决包括关键工艺模块、90nm和65nm器件建模及单元库建库、90nm和65nm器件可靠性技术等关键问题研究的基础上,完成90nm和65nm器件和规模电路的研制,演示所开发的90nm和65nm技术在大生产中的应用,为我国集成电路和SOC产业的快速发展提供关键支撑技术平台。

    2. 973项目:<<系统芯片(System on a Chip)中新器件、新工艺的基础研究>>中“新型栅结构材料研究”课题2000年5月~2005年4月
    针对微电子技术发展的需要和高K栅介质研究所面临主要问题,系统开展材料和工艺技术基础方面的研究工作,探索适于器件和电路需要的高K栅介质材料和制备工艺,研究高K栅介质MOS器件性能及其可靠性问题,提出相关的器件模型和模拟方法。研究内容主要包括:高K栅介质材料性能的研究、与CMOS工艺兼容的高K栅介质制备工艺的研究、高K栅介质MOS器件性能和可靠性问题的研究、新型栅电极材料及其与CMOS和高K栅介质工艺兼容的制备工艺、新型高K栅介质MOS器件性能的模拟研究工作。

    3. 自然科学基金课题:高K/金属栅CMOS器件的性能退化机理研究,2005年1月~2007年12月
    针对可以满足SOC高速、低压、低功耗应用需求的高K/金属栅CMOS器件集成工艺中遇到的引起器件性能退化的技术难题,如金属栅费米钉扎效应和沟道载流子迁移率下降等,从基本物理机制出发阐明高K/金属栅CMOS器件性能退化的原因,提出解决这些技术困难的可能途径和技术路线。为适于SOC的高速、低压、低功耗器件的发展奠定基础。

    4. 高等学校博士学科点专项科研基金:新型高K栅介质可靠性问题研究,2005年1月~2007年12月
    针对亚65纳米技术代CMOS器件性能的需求,开展高K栅介质可靠性相关问题的研究,包括通过研究应力引起的漏电流(SILC)和TDDB击穿(特征和相关的物理机制,提出表征新型栅介质MOS器件性能退化的特征参数和表征方法及技术。

    6. 自然科学基金重点课题:用于SOC的新一代嵌入式铁电存储器材料、器件与兼容工艺,2005年1月~2008年12月
    针对适于SOC的嵌入式铁电存储器应用需求,解决关键的材料、器件以及兼容工艺等基础问题,包括:铁电、电极材料的选择;制备技术的优化;铁电薄膜与CMOS工艺的兼容性;器件模型;存储单元/阵列结构和工作模式的设计、验证与优化等问题。

    7. 自然科学基金重点课题:表面与超薄膜磁性的实验和理论研究,2003年1月~2006年12月

    摸索和掌握制备铁磁性氧化物半导体薄膜材料的方法和工艺技术;系统的了解和掌握磁性掺杂离子种类、浓度对氧化物半导体的结构、电性、磁性等影响、控制规律和机理;获得具有高极化率和居里温度高于室温的铁磁性氧化物半导体新材料。



    讲授课程
    本科生主干基础课《半导体物理》
    本科生限选课《半导体材料》


    著作论文
    译著:
    刘晓彦 贾霖 康晋锋译《现代半导体器件物理》(Modern Semiconductor Device Physics, edited by S. M. Sze (John Wiley & Sons, Inc., 1999)),科学出版社2001年版,北京

    期刊论文:

    2009

    1. Yuhui He, Yuning Zhao, Chun Fan, Jinfeng Kang, Ruqi Han, and Xiaoyan Liu, “Performance Evaluation of GaAs–GaP Core–Shell-Nanowire Field-Effect Transistors”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 6, pp. 1199 – 1203,? JUNE 2009
    2. Shimeng Yu, Yuning Zhao, Lang Zeng, Gang Du, Jinfeng Kang, Ruqi Han, and Xiaoyan Liu, “Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 6, pp. 1211-1219, JUNE 2009
    3. Yu S (Yu, Shimeng), Zhao YN (Zhao, Yuning), Du G (Du, Gang), Kang JF (Kang, Jinfeng), Han RQ (Han, Ruqi), Liu XY (Liu, Xiaoyan), “Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness”, J. J. APPL. PHYS.   48(4),   Part 2, 04C052, APR 2009
    4. Bing Sun, Lifeng Liu, Nuo Xu, Bin Gao, Yi Wang, Dedong Han, Xiaoyan Liu, Ruqi Han, *Jinfeng Kang, “The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device”, J. J. APPL. PHYS.   48(4),   Part 2, 04C061, APR 2009
    5. B. Sun, Y. X. Liu, L. F. Liu, N. Xu, Y. Wang, X. Y. Liu, R. Q. Han, *J. F. Kang,? “Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices”, J. APPL. PHYS.   105(6), 061630, MAR 15 2009
    6. X. Sun, B. Sun, L.F. Liu, N. Xu, X.Y. Liu, R.Q. Han, J.F. Kang, G.C. Xiong, T.P. Ma. Resistive switching in CeOx films for nonvolatile memory application. IEEE Electron Device Lett., 30(4), pp.334-336, Apr. 2009.
    7. Yang JF, Yang JQ, Yan BG, G. Du, X.Y. Liu, R.Q. Han, *J.F. Kang, C.C. Liao, Z.H.Gan, M. Liao, J.P. Wang, W, Wong, “Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors”, Appl. Phys. Lett., Vol.94(8), 082103, FEB 23 2009
    8. Zeng L, Xia Z, Du G, “Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs”, IEEE Transactions on Nanotechnology, Vol.8 (1), pp.10-15, JAN 2009
    9. Yu SM, Zhao YN, Du G, et al, “The impact of line edge roughness on the stability of a FinFET SRAM”, Semicond. Sci. Technol., Vol.24(2), No. 025005, FEB 2009

    2008

    1. Liu LF, Kang JF, Wang Y, et al., “Hydrogen Annealing Induced the Enhancement of Ferromagnetism in Cr-Doped TiO2 Anatase Films”, Jan J Appl.Phys, Vol. 47(12), pp.8787-8789, DEC 2008
    2. B.G.. Yan, J.Q. Yang, Z.L. Xia,? X.Y. Liu, G. Du, R.Q. Han, *J.F. Kang, C. C. Liao, Z. Gan, M. Liao, J. P. Wang, W. Wong, “Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale PMOS Devices”, IEEE Transactions on Nanotechnology, Vol7,? Issue 4, , pp.418 – 421, July 2008
    3. Y.C. Song, X.Y. Liu, G. Du, J.F. Kang, R.Q. Han, “Carriers recombination processes in charge trapping memory cell by simulation”, CHINESE PHYSICS ?B17(7) pp. 2678-2682, ?JUL 2008
    4. L.F. Liu, J.F. Kang, Y. Wang, et al, “Vacuum annealing induced room-temperature ferromagnetism in Co0.1Ti0.9O2-delta films prepared by sol-gel method”, CHINESE PHYSICS LETTERS 25(7), pp. 2638-2641, JUL 2008
    5. Xu N, Liu LF, Sun X, et al., “Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories”, Appl. Phys. Lett., 92, p.232112, JUN 9 2008
    6. N. Xu , L.F. Liu, X. Sun, C. Chen, Y. Wang, D.D. Han, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “Bipolar Switching Behavior in TiN/ZnO/Pt Resistive Nonvolatile Memory with Fast Switching and Long Retention”, Semicond. Sci. Technol. 23(7), Article Number: 075019, JUL 2008
    7. Sun B, Liu LF, Han DD, et al., Improved resistive switching characteristics of Ag-doped ZrO2 films fabricated by sol-gel process, Chin Phys Lett. 25, p.2187-2189, JUN 2008
    8. Ji M, Zhao K, Du G, J.F. Kang, R.Q. Han, X.Y. Liu, “Quantum mechanical effects on heat generation in nano-scale MOSFETs”, CHINESE PHYSICS B 17( 5), pp.1869-1873, MAY 2008
    9. L.F. Liu, J.F. Kang, N. Xu, X. Sun, C. Chen, B. Sun, Y. Wang, X.Y. Liu, X. Zhang, and R.Q.Han, “Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices”, Jan J Appl.Phys. 47(4), Part 2, pp 2701-2703, APR 2008
    10. Zeng L, Liu XY, Du G, Kang JF, Han RQ, “ Impact of gate overlap on performance of Schottky barrier metal-oxide-semiconductor field-effect transistors including gate induced barrier lowering effect”, Jan. J Appl. Phys., 47(4), Part 2, pp 2660-2663, APR 2008
    11. Wang Y, Sun L, Li Y, Zhang YF,? Han DD, Liu LF, Kang JF, Jin YF, Zhang X, Han RQ, “Hydrogenation-induced room-temperature ferromagnetism in Co-doped ZnO nanocrystals”, Jan. J Appl. Phys., 47(4), Part 2, pp 3261-3263, APR 2008

     

    2007

    1. J.F. Kang, H.Y. Yu, C. Ren, N. Sa, H.Yang, M.-F. Li, D.S.H. Chan, X.Y. Liu, R.Q. Han, D.-L. Kwong, “Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications”, Journal of the Electrochemical Society, 154, 2007, p H927-H932
    2. L.F. Liu, J.F. Kang, N. Xu, X.Sun, C.Chen, B.Sun,Y. Wang, X.Y. Liu, X. Zhang, R.Q. Han,“Gd Doping Improved Resistive Switching Characteristics of TiO2-based Resistive Memory Devices”,Japanese Journal of applied physics, (Accepted)
    3. Jingfeng Yang, Baoguang Yan, Xiaoyan Liu, Ruqi Han, Jinfeng Kang*, C. C. Liao, Z. H. Gan, M. Liao, J. P. Wang, and W. Wong, “Poststress recovery mechanism of the negative bias temperature instability based on dispersive transport”, Appl. Phys. Lett. 90, p082908, 22 Feb 2007
    4. Xia ZL (Xia Zhi-Liang), Du G (Du Gang), Liu XY (Liu Xiao-Yun), Kang JF (Kang Jin-Feng), Han RQ (Han Ru-Qi), “Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation”, CHINESE PHYSICS 16 (2): 537-541 FEB 2007
    5. L. F. Liu, J. F. Kang, Y Wang, H Tang, L. G. Kong, L Sun, X Zhang, R. Q. Han, “The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol-gel method”, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 308 (1): 85-89 JAN 2007
    6. Z.L. Xia, G. Du, Y.C. Song, J. Wang, , X.Y. Liu, , J F. Kang, R.Q Han, “Monte Carlo simulation of band-to-band tunneling in silicon devices”, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (4B): 2023-2026 APR 2007
    7. Han DD (Han De-Dong), Kang JF (Kang Jin-Feng), Liu XY (Liu Xiao-Yan), Sun L (Sun Lei), Luo H (Luo Hao), Han RQ (Han Ru-Qi), “Fabrication and characteristics of high-K HfO2 gate dielectrics on n- germanium”, CHINESE PHYSICS 16 (1): 245-248 JAN 2007

    2006

    1. Sa N, Kang JF*, Yang H, Liu XY, Zhang X, Han RQ, “Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs”, ACTA PHYSICA SINICA 55 (3): 1419-1423 MAR 2006
    2. Kong LG, Liu XY, Du G, Wang Y, Kang JF, Han RQ, “Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation”, CHINESE PHYSICS 15 (3): 654-658 MAR 2006
    3. 孔令刚,康晋锋,王漪,刘力锋,刘晓彦,张兴,韩汝琦,“CoxTi1-xO2-δ体材中氢退火引起的铁磁性及结构相变”,物理学报,2006年第55卷第3期。Kong LG, Kang JF*, Wang Y, Liu LF, Liu XY, Zhang X, Han RQ, “Room-temperature ferromagnetism in bulk CoxTi1-xO2-delta induced by the phase transformation in the hydrogenation sintering process”, ACTA PHYSICA SINICA 55 (3): 1453-1457 MAR 2006  
    4. 刘力锋,康晋锋,王漪,孔令刚,张兴,韩汝琦,“溶胶-凝胶法制备TiO2:Co薄膜的磁性及其机理研究”,中国稀土学报(已接受)。
    5. L. G Kong, J.F Kang*, Y. Wang, L. Sun, L.F. Liu, X.Y. Liu, X. Zhang and R.Q. Han. “Oxygen vacancies-related-room-temperature ferromagnetism in polycrystalline bulk Co-doped TiO2”, Electrochemical and Solid-State Letters 9 (1): G1-G3 2006
    6. Hou DQ, Xia ZL, Du G, Liu XY, Wang Y, Kang JF, Han RQ, “Quantitative investigation of the velocity overshoot overestimation's impact on predicting device characteristics in HD model”, CHINESE JOURNAL OF ELECTRONICS 15 (2): 213-216 APR 2006
    7. Hou DQ, He YH, Liu XY, Kang JF, Chen J, Han RQ, “Time-dependent transport: Time domain recursively solving NEGF technique”, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 31 (2): 191-195 MAR 2006
    8. Liu LF, Kang JF, Wang Y, Tang H, Kong LG, Zhang X, Han RQ, “The role of oxygen vacancies in magnetism of CoxTi1-xO2-delta films on Si(001) prepared by sol-gel method “, SOLID STATE COMMUNICATIONS 139 (6): 263-267 2006
    9. Y Wang, L Sun, L. G. Kong, J. F. Kang, X Zhang, R. Q. Han, “Hydrogenation induced transformation of paramagnetism to room-temperature ferromagnetism in co-doped TiO2 ceramics”, JOURNAL OF ELECTROCERAMICS 16 (4): 389-391 JUL 2006
    10. Y Wang, L Sun, L. G. Kong, J. F. Kang, X Zhang, R. Q. Han, Room-temperature ferromagnetism in Co-doped ZnO bulk induced by hydrogenation”, JOURNAL OF ALLOYS AND COMPOUNDS 423 (1-2): 256-259 OCT 26 2006
    11. Wang Y, Sun L, Han DD, Liu LF, Kang JF, Liu XY, Zhang X, Han RQ, “Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor”, ACTA PHYSICA SINICA 55 (12): 6651-6655 DEC 2006

    2005

    1. Z.L. Xia, G. Du, X.Y. Liu, J.F. Kang, R.Q. Han, Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation”, SOLID-STATE ELECTRONICS 49 (12): 1942-1946 DEC 2005
    2. D.D. Han, Y. Wang, D.Y Tian, W. Wang, X.Y. Liu, J.F. Kang, R.Q. Han, “Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates”, MICROELECTRON ENG 82 (2): 93-98 OCT 2005
    3. J.F. Kang, H.Y. Yu, C. Ren, X.Y. Liu, R.Q. Han, B. Yu, D.-L. Kwong, “An Improved Pre-gate Cleaning Process for High K Gate Dielectrics Fabrication”, Electrochemical and Solid-State Letters 8 (11): G314-G316 2005
    4. J.F. Kang, H.Y. Yu, C. Ren, M.-F. Li, D.S.H. Chan, X.Y. Liu, and D.-L. Kwong, “Ultra-thin HfO2 (EOT<0.75nm) Gate Stack With TaN/HfN Electrodes Fabricated Using A High-Temperature Process”, Electrochemical and Solid-State Letters 8 (11): G311-G313 2005
    5. G. Du, X.Y. Liu, Z.L. Xia, Y.K. Wang, D.Q. Hou, J.F. Kang, R.Q. Han, “Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale” J. J. APPL. PHYS. PART 1, 44 (4B): 2195-2197 APR 2005
    6. G. Du, X.Y Liu, Z.L.Xia, J.F. Kang, Y. Wang, R.Q. Han, H.Y.Yu, D.L.Kwong, “Monte Carlo Simulation of p and n channel GOI MOSFETs by Solving Quantum Boltzmann Equation”, IEEE TRANSACTIONS ON ELECTRON DEVICES 52 (10): 2258-2264 OCT 2005
    7. D.D. Han, X.Y. Liu, J.F. Kang, Z.L. Xia G. Du, R.Q. Han, “Fabrication and characteristics of Ni-germanide Schottky contacts with Ge”, CHINESE PHYSICS 14 (5): 1041-1043 MAY 2005
    8. N. Sa, J.F. Kang*, H. Yang, X.Y. Liu, Y.D. He, R.Q. Han, C. Ren, H.Y. Yu, D.S.H. Chan, D.-L. Kwong, “Mechanism of Positive-Bias Temperature Instability in Sub-1 nm TaN/HfN/HfO2 Gate Stack with Low Preexisting Traps”, IEEE Electron Device Lett. 26(9), pp.610-612, Sept. 2005
    9. J.F. Kang, H.Y. Yu, C. Ren, X.P. Wang, M.-F. Li, D.S.H. Chan, Y.-C. Yeo, N. Sa, H. Yang, X.Y. Liu, R.Q. Han, and D.-L. Kwong, “Improved Electrical and Reliability Characteristics of HfN/HfO2 Gated nMOSFET with 0.95 nm EOT Fabricated Using a Gate-First Process”, IEEE Electron Device Letters, VOL. 26, pp.237 - 239, April 2005

    2004

    1. J.F. Kang, H.Y. Yu, C. Ren, M.F. Li, D.S.H. Chan, H. Hu, H.F. Lim, W.D. Wang, D. Gui, D.L. Kwong, “Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering”, Appl. Phys. Lett., 84 (9): 1588-1590 MAR 1 2004
    2. D. Gui, J.F. Kang, H.Y. Yu, H.F. Lim, “SIMS study on N diffusion in hafnium oxynitride”, APPLIED SURFACE SCIENCE 231-2: 590-593, JUN 2004
    3. C. Ren, H.Y. Yu, J.F. Kang, X.P. Wang, H.H.H. Ma, Y.C. Yeo, D.S.H. Chan, M.F. Li, D.L. Kwong, “A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate”, IEEE Electron Device Lett., 25 (8): 580-582 AUG 2004
    4. H.Y. Yu, C. Ren, Y.C. Yeo, J.F. Kang, X.P. Wang, H.H.H. Ma, M.F. Li, D.S.H. Chan, D.L. Kwong, “Fermi pinning-induced thermal instability of metal-gate work functions”, IEEE Electron Device Lett., 25 (5): 337-339 MAY 2004
    5. C. Ren, H.Y. Yu, J.F. Kang, Y.T. Hou, M.F. Li, W.D. Wang, D.S.H. Chan, D.L. Kwong, “Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO2 gate stack”, IEEE Electron Device Lett., 25 (3): 123-125 MAR 2004
    6. H.Y. Yu, J.F. Kang, C. Ren, J.D. Chen, Y.T. Hou, C. Shen, M.F. Li, D.S.H. Chan, K.L. Bera, Tung CH, D.L. Kwong, “Robust high-quality HfN-HfO2 gate stack for advanced MOS device applications”, IEEE Electron Device Lett., 25 (2): 70-72 FEB 2004
    7. Yu, H.Y.; Kang, J.F.; Ren, Chi; Li, M.F.; Kwong, D.L.; “HfO2 gate dielectrics for future generation of CMOS device application”, Chinese Journal of Semiconductors, v 25, n 10, October, 2004, p 1193-1204
    8. 王成刚,韩德栋,杨红,刘晓彦,王玮,王漪,康晋锋*,韩汝琦“HfO2栅介质的泄漏电流机制及SILC效应”半导体学报, Vol.25(7), 841-846, 2004
    9. 韩德栋, 康晋锋*, 王成钢, 刘晓彦, 韩汝琦, 王玮, “恒电流应力引起HfO2栅介质薄膜的击穿特性”, 半导体学报,Vol.25(8), 1009-1012, Aug., 2004
    10. 韩德栋, 康晋锋, 刘晓彦, 韩汝琦, “HfO2高K栅介质薄膜的电学特性研究”, 固体电子学研究与进展,Feb., 2004

    2003

    1. J.F. Kang, X.Y. Liu, D.Y. Tian, W. Wang, G.J. Lian, G.C. Xiong, R.Q. Han, “The post-deposition anneal effects on the electrical properties of HfO2 gate dielectric deposited by ion beam sputtering at room temperature”, CHINESE J ELECTRON 12 (2): 270-272 APR 2003
    2. D.D. Han, J.F. Kang, C.H. Lin, et al, “Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors”, MICROELECTRON ENG 66 (1-4): 643-647 APR 2003
    3. C.H. Lin, J.F. Kang*, D.D. Han, et al., “Electrical properties of Al2O3 gate dielectrics”, MICROELECTRON ENG 66 (1-4): 830-834 APR 2003
    4. J.H. Zhang, J.F. Kang*, S.Z. Lou, et al., “Improved sensing scheme for FeRAM”, MICROELECTRON ENG 66 (1-4): 695-700 APR 2003
    5. M. Liu, J.F. Kang*, J.H. Zhang, et al., “A MOS-based behavioral macro-model for ferroelectric capacitors”, MICROELECTRON ENG 66 (1-4): 813-817 APR 2003
    6. X.Y. Liu, J.F. Kang, R.Q. Han, “Direct Tunneling Current Model for MOS Devices with Ultra-thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect”, Solid State Communication, v125, no.3-4, January, 2003, p 219-223
    7. Dedong Han, Jinfeng Kang, Changhai Lin, Ruqi Han, “Annealing Characteristics of Ultra-thin High-K HfO2 Gate Dielectrics”, Chinese Phys. 12 (3): 325-327 MAR 2003
    8. 杨红,康晋锋*,韩德栋,任驰,夏志良,刘晓彦,韩汝琦,“Al2O3 高K栅介质的可靠性研究”,半导体学报, Vol.24(9), 1105-1108, 2003
    9. 任驰,杨红,韩德栋,康晋锋*,刘晓彦,韩汝琦“Al2O3栅介质的制备工艺及其漏电流机制” 半导体学报, Vol.24(10), 1109-1114, 2003

    2002

    1. J.F. Kang, K. Xun, X.Y. Liu, et al., “Interfacial and structural characteristics of CeO2 films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment”, THIN SOLID FILMS 416 (1-2): 122-128, SEP 2 2002
    2. Xiaoyan Liu, Jinfeng Kang, Lei Sun, Ruqi Han, Yangyuan Wang, “Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics”, IEEE Electron Device Lett. Vol.23, No.8, 270 (2002)
    3. Xiaoyan Liu, Jinfeng Kang, Ruqi Han “Gate Current for MOSFETs with High k Dielectric Materials”, CHINESE JOURNAL OF SEMICONDUCTORS, Vol.23, No.10, p1009-1013, 2002
    4. 王阳元,康晋锋,“超深亚微米集成电路中的互连问题-低K介质与铜的互连集成技术” 半导体学报, Vol.23(11), 1121 (2002)
    5. 王阳元,康晋锋,“硅集成电路光刻技术的发展与挑战”,半导体学报, Vol.23(3), 225 (2002)
    6. 王阳元,康晋锋,“物理学研究与微电子科学技术的发展”,物理,Vol.31 No.7,2002

    2001

    • Jinfeng Kang, Xiaoyan Liu, Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, Xudong Guan, Ruqi Han, Yangyuan Wang, "Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si (100) substrates using pulsed laser deposition", Microelectronic Engineering. Vol.56 (1-2), 191 (2001)
    • 康晋锋,刘晓彦,王玮,俞挺,韩汝琦,“CeO2高K栅介质薄膜的制备及其电学性质研究”,半导体学报, Vol.22(7), p.865 (2001) J.F. Kang, Xiaoyan Liu, Wei Wang, Ting Yu, Ruqi Han, Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, “Epitaxial growth of CeO2 films on Si(100) substrate and its electrical properties”, Chinese J. Semiconductor, Vol.22(7), 865 (2001)
    • Huiwen Zhu, Xiaoyan Liu, Chao Shen, Jinfeng Kang, Ruqi Han, “Characterization of Sub-100nm MOSFETs With High-k Gate Dielectrics”, Chinese J. Semiconductor,Vol.22, No.9, p.1107? (2001)

    2000

    • X.Y. Liu, J.F. Kang, R.Q. Han, “The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron MOSFET”, Solid State Electronics, 44, pp1435-1439 (2000)
    • Y. J. Bei, Y. Gao, J. F. Kang, G. J. Lian, X. D. Hu, G. C. Xiong, S. S. Yan, "Size effect of 1/f noise in the normal state of YBa2Cu3O7-d", Phys. Rev B61(2), 1495 (2000)

    1999

    • G. J. Lian, Z. H. Wang, J. Gao, J. F. Kang, M. Y. Li, G. C. Xiong, “Large low-field magnetoresistance observed in heterostructure La0.7Ca0.3MnO3/Gd0.7Ca0.3MnO3 multilayers”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 32(2), 90 (1999)
    • Z. H. Wang, G. J. Lian, J. Gao, Y. Q. Zhou, J. F. Kang, M. Y. Li, G. C. Xiong, “Large low-field magnetoresistance observed in polycrystalline La0.7Ca0.3MnO3 films”, CHINESE PHYSICS LETTERS, 16(1), 59 (1999)
    • 熊光成,连贵君, 康晋锋,孙云峰,“异质外延生长钙钛矿结构氧化物薄膜”,低温物理学报,第21卷第4期,241, 1999
    • 连贵君,李美亚, 康晋锋,郭建栋, 孙云峰,熊光成,“钙钛矿结构氧化物薄膜的外延生长”,物理学报,第48卷 第10期,1817 (1999)

    1998

    • J. F. Kang, G.C.Xiong, Y.Y.Wang, R.Q.Han, “Epitaxial Growth of CeO2 (100) Films on Si (100) Substrates by Dual Ion Beams Reactive Sputtering”, Solid State Communications 108, 225 (1998).
    • Lian GJ, Wang ZH, Gao J, Zhou YQ, Kang JF, Li MY, Xiong GC, "Anomalous resistance behaviour observed across the interface of superconducting YBa2Cu3O7 and ferromagnetic La0.7Ca0.3MnO3", Solid State Communications, vol.108, no.2, pp.123-6 (1998)
    • G.C. Xiong, G.J. Lian, J.F. Kang, M.Y. Li, “Growth dependencies of epitaxial oxide thin films prepared by pulsed laser deposition”, Thin Solid Films Vol. 334(1-2), p 82-86 (1998)
    • 王阳元,韩汝琦,刘晓彦,康晋锋,“硅微电子物理局限的挑战”,电子学报,Vol.26, No.11, p.77, 1998
    • 连贵君,王志海,康晋锋,熊光成,“超薄超导YBa2Cu3O7薄膜的外延生长和电阻温度关系”, 低温物理学报, 20(1), p.41, 1998

    1997

    • J.F. Kang, R.Q. Han, G.C. Xiong, X.Y. Liu, Y.Y. Wang, “Kinetic inductance of coupled superconducting microstrip line”, Physica C Vol. 282-287(4), 2529 (1997)
    • Jinfeng Kang, Ruqi Han, and Yangyuan Wang, “Propagation Characteristics of Superconducting Interconnect for VLSI Packaging Predicted by A Generalized Two-Fluid Model”, IEEE Trans. Appl.Supercond. 7, 27 (1997).
    • Jinfeng Kang, Ruqi Han, Guangcheng Xiong, Xiaoyan Liu, and Yangyuan Wang, “Simple Formulae for Kinetic Inductance of Superconducting Coupled Microstrip”, J. Appl. Phys. 81, 1829 (1997).
    • G. C. Xiong, G. J. Lian, J. F. Kang, Y. F. Hu, Y. Zhang, Z. Z. Gan, “Properties of multilayer samples with interface of superconducting YBa2Cu3O7 and ferromagnetic Pr0.7Sr0.3MnO3”, Phsica C 282, 693 (1997).
    • 张寅,连贵君,周雅琴,胡宇 峰,康晋锋,熊光成,“La1-xSrxMnO3 系列(0.2<x<0.6)样品电阻率随温度变化”,低温物理学报,V.19, 327, 1997
    • 连贵君,康晋锋,胡宇峰,张寅,熊光成,“高温超导/铁磁多层膜样品制备与输运性质的初步研究”,低温物理学报,19 (1997) 175

    19961995

    • G.C.Xiong, B.Zhang, S.C.Wu, Z.X.Lu, J.F.Kang, G.L.Lian, and D.S.Dai, "Effect of Film Thichness on Colossal Magnetoresistance in Pr0.3Sr0.7MnO3 Films", Solid State Communications 93, 17 (1996)
    • 康晋锋,韩汝琦,王阳元, “高Tc超导互连的高频传输特性”电子学报,24卷11期,105(1996)
    • Jinfeng Kang, Xin Chen, Youxiang Wang, Ruqi Han, Guangcheng Xiong, Guijun Lian, Jie Li, Sicheng Wu, “Different interdiffusion characteristics between Ag/YBa2Cu3O7-x and Al/YBa2Cu3O7-x contact interfaces”, Solid Solid State Communications Vol. 94(2), 99 (1995)
    • 康晋锋,陈新,王佑祥,韩汝琦,熊光成,连贵君,李杰,吴思诚,“正常态金属与氧化物高温超导薄膜界面扩散特性分析”, 物理学报,第44卷 第11期,1831 (1995)
    • 熊光成, 康晋锋,连贵君,王佑祥,陈新,韩汝琦, “Ag/YBa2Cu3O7-x or Al/YBa2Cu3O7-x 接触界面性质分析” 低温物理学报,第17卷第3期,179 (1995).

     

    会议论文:
    2009

    • B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X.Y. Liu, Y. Wang, R.Q. Han, J.F. Kang, B. Yu, Y.Y. Wang, Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology. Symposium on VLSI technology (VLSI2009), (Kyoto, Japan, June,14-18, 2009), p.30.
    • H.Y. Yin, T.S. Zhang, X. Wang, L.F. Liu, Y. Wang, X.Y. Liu, J.F. Kang, PV Efficiency Improved Large-area Dye-sensitized Solar Cells. International Semiconductor Technology Conference (ISTC2009), Shanghai, China, March 19-20, 2009.

    2008

    • B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, *J.F. Kang, B. Yu, Y.Y. Wang, “Oxide-Based RRAM Switching Mechanism: A New Ion Transport Recombination Model”, 2008 Int Elect. Devices Meeting, San Francisco, Dec. 15-17, 2008
    • N. Xu, B. Gao, L.F. Liu, Bing Sun, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “A unified physical model of switching behavior in oxide-based RRAM”, 2008 Symposium on VLSI Technology (June 17-19, 2008, Hawaii, USA), p.100, 2008
    • Song YC, Liu XY, Wang ZY, et al, “Evaluating the Effects of Physical Mechanisms on the Program, Erase and Retention in the Charge Trapping Memory”, SISPAD2008 International Conference on Simulation of Semiconductor Processes and Devices, pp 41-44, 2008 (International Conference on Simulation of Semiconductor Processes and Devices, SEP 09-11, 2008 Hakone, JAPAN)
    • Zhao YN, Du G, Kang JF, et al, “An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs”, SISPAD2008 International Conference on Simulation of Semiconductor Processes and Device, pp 133-136, 2008 (International Conference on Simulation of Semiconductor Processes and Devices, SEP 09-11, 2008 Hakone, JAPAN)
    • N. Xu, Lifeng Liu, Xiao Sun, Chen Chen, Xiaoyan Liu, Dedong Han, Yi Wang, and Ruqi Han and Jinfeng Kang* “Resistance switching of TiN/ZnO stack for resistive random Access Memory (RRAM) Application”, MRS 2008 spring meeting, March 25-27,2008, Moscone West and San Francisco Marriot, USA.

    2006

    • N. Sa, J.F. Kang*, H. Yang, X.Y. Liu, X. Zhang, R.Q. Han, C. Ren, H.Y. Yu, D.S.H. Chan, and D.-L. Kwong, “Interfacial Reaction-Related Intrinsic PBTI and NBTI in HfN/HfO2 Gate Stacks Caused by High Temperature Process”, 2006 MRS Spring Meeting, San Francisco, CA, USA, Apr.17~21), E3.3, 2006
    • J.F. Kang, N. Sa, B.G. Yan, J.F. Yang, X.Y. Liu, R.Q. Han, Y.Y. Wang, "Reliability degradation characteristics of ultra-thin gate dielectrics for Nano-CMOS application" - The 2nd Sinano Workshop on Nanoscale CMOS and Si-based Beyond-CMOS Nanodevices (Montreux, Switzerland, September 22th, 2006) (Invited Talk)
    • B.G. Yan, J.F. Kang, N. Sa, X.Y. Liu, G. Du, R.Q. Han et al, “Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric”, 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT2006) Proceedings (October 23-26, 2006, Shanghai, China), p.1138, 2006
    • J.F. Yang, Z.L. Xia, G. Du, X.Y. Liu, R.Q. Han, J.F. Kang, “Coulomb Scattering induced mobility degradation in Ultrathin-body SOI MOSFETs with high-k gate stack”, 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT2006) Proceedings (October 23-26, 2006, Shanghai, China), p.1315, 2006
    • Zhiliang Xia, Gang Du, Xiaoyan Liu, Jinfeng Kang and Ruqi Han, “Effect of Surface Roughness on Quasi-Ballistic Transport in Nano-Scale Ge and Si Double-Gate MOSFETs”, 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT2006) Proceedings (October 23-26, 2006, Shanghai, China), p. 152, 2006

    2005

    • J.F. Kang, H.Y. Yu, C. Ren, H. Yang, N. Sa, X.Y. Liu, R.Q. Han, M-F. Li, D.S.H. Chan, and D.-L. Kwong, “Scalability and Reliability of TaN/HfN/HfO2 Gate Stacks Fabricated by a High Temperature Process”, ESSDERC-ESSCIRC2005 (Grenoble, France, Sept. 12~16, 2005)
    • H.L. Kao, A. Chin, B.F. Hung, J.M. Lai, C.F. Lee, M.-F. Li, G.S. Samudra, C. Zhu, X.L. Xia, X.Y. Liu, and J.F. Kang, “Strain-Induced Very Low Noise RF MOSFETs on Flexible Plastic Substrate”, 2005 Symp. On VLSI Tech. Dig. (Kayoto, Japan, June, 2005), 160, 2005.
    • Linggang Kong, Gang Du, Xiaoyan Liu,Yi Wang, Jinfeng Kang, and Ruqi Han, “Simulation of Spin-polarized Transport in GaAs/GaAlAs Quantum Well Considering Intersubband Scattering by Monte Carlo Method”,2005 international conference on simulation of semiconductor processes and devices (SISPAD), September1-3,2005,Tokyo,Japan.
    • Yi Wang., Lei Sun, Ling-Gang Kong, Jin-Feng Kang, Xing Zhang, Ru-Qi Han,“Hydrogenation Induced Transformation of Paramagnetism to Room-Temperature Ferromagnetism in Co-doped TiO2 Ceramics”, 3rd International Conference on Materials for Advanced Technologies (ICMAT & IUMRS-ICAM 2005), Singapore, 2005.
    • Yi Wang., Lei Sun, Ling-Gang Kong, Jin-Feng Kang, Xing Zhang, Ru-Qi Han, “Room-Temperature Ferromagnetism in Co-doped ZnO Bulk induced by Hydrogenation”, 2005 European Materials Research Society Fall Meeting (E-MRS Fall Meeting 2005), Poland, 2005.

    2004

    • J.F. Kang, C. Ren, H.Y. Yu, X.P. Wang, M-F. Li, D.S.H. Chan, Y-C. Yeo, Y.Y. Wang, and D.-L. Kwong, “A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO2 CMOS Devices”, 2004 International Conference on Solid State Devices and Materials (SSDM 2004) (Tokyo, Japan, Sept. 15~17, 2004)
    • H.Y. Yu, C. Ren, J.F. Kang, Yee-Chia Yeo , Daniel S.H. Chan , M.F.Li, D.-L. Kwong, “Thermal Stability of Metal Gate Work Functions”,2004 Int. Conference on Solid State Devices & Materials (SSDM) (Tokyo, Japan, Sept. 15~17, 2004)
    • G. Du, X.Y. Liu, Z.L. Xia, Y.K. Wang, D.Q. Hou, J.F. Kang, R.Q. Han, “Evaluations of Scaling Properties for GOI MOSFETs in Nano-Scale”, 2004 International Conference on Solid State Devices and Materials (SSDM 2004) (Tokyo, Japan, Sept. 15~17, 2004)
    • J.F. Kang, H.Y. Yu, C. Ren, X.P. Wang, M-F. Li D.S.H. Chan, X.Y. Liu, R.Q. Han, Y.Y. Wang, and D.-L. Kwong, “Characteristics of Sub-1 nm CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications” (Invited Talk), International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 1, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 393-398
    • Dedong Han, Xin Wang, Yi Wang, Dayu Tian, Wei Wang, Xiaoyan Liu, Jinfeng Kang, Ruqi Han, “Fabrication and Characteristics of Ti- and Ni-Germanide Schottky Contacts on n-Ge (100) Substrates”,International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 1, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 472-475
    • Hong Yang, Sa, Ning; Tang, Liang; Liu, Xiaoyan; Kang, Jinfeng; Han, Ruqi; Yu, H.Y.; Ren, C.; Li, M.-F.; Chan, D.S.H.; Kwong, D.-L.”TDDB characteristics of ultra-thin HfN/HfO2 gate stack”, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 2, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 808-811
    • Li, M.F.; Yu, H.Y.; Hou, Y.T.; Kang, J.F.; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C.; Zhu, C.X.; Chan, D.S.H.; Chin, Albert; Kwong, D.L: “Selected topics on HfO2 gate dielectrics for future ULSI CMOS devices”, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 1, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 366-371
    • Xia, Zhiliang, Du, Gang; Liu, Xiaoyan; Kang, Jinfeng; Han, Ruqi, “Universality of electron mobility in Ge MOSFETs investigated by Monte Carlo simulation”, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 1, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 315-318
    • Hou, D.Q.; Xia, Z.L.; Du, G.; Liu, X.Y.; Wang, Y.; Kang, J.F.; Han, R.Q., “Computational investigation of velocity overshoot effects in double gate MOSFETs”, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 2, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 1015-1018
    • Wu, Tao; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng; Han, Ruqi, “Characteristics of 25nm MOSFETs with mechanical strain in the channel’, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 1, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 321-324
    • Liu, X.Y.; Du, G.; Xia, Z.L.; Kang, J.F.; Wang, Y.; Han, R.Q.; Yu, H.Y.; Li, M.-F.; Kwong, D.L., “Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation”, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, v 2, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, 2004, p 1186-1191
    • J.F. Kang, Y.H. Yu, D-L. Kwong, “The Characteristics of Nitrogen Incorporated in HfNxOy Gate Dielectrics and the Effects on the Electrical Properties”, ISTC (Sept. 15-17, 2004, Shanghai, China)
    • Hong Yang, Ning Sa, Liang Tang, Xiaoyan Liu, Jinfeng Kang*, Ruqi Han, Y.H. Yu, C. Ren, D-L. Kwong, “Stress Induced Leakage Current and Time Dependent Dielectric Breakdown Characteristics of Ultra-Thin HfO2 Gate Dielectrics”, ISTC (Sept. 15-17, 2004, Shanghai, China)
    • D.D. Han, X.Y. Liu, J.F. Kang, Z.L. Xia, G. Du, R.Q. Han, “NI GERMANIDE SCHOTTKY CONTACT WITH GE”, ISTC (Sept. 15-17, 2004, Shanghai, China).

    2003

    • H.Y. Yu, J.F. Kang, J.D. Chen, C. Ren, Y.T. Hou, S.J. Whang, M.F. Li, D.S.H. Chan, K.L. Bera, C.H. Tung, A. Du and D.L. Kwong, “Thermally Robust High Quality HfN/HfO2 Gate Stack for Advanced CMOS Devices”, IEDM Tech. Dig, 2003
    • C. Ren, J.F. Kang*, H. Yang, et al, “Carrier Transport and Anomalous C-V Characteristics in PVD Al2O3 Gate Dielectrics”, ICMATL 2003 (Singapore, Oct. 2003), p.1626, 2003

    2002

    • Dedong Han, Jinfeng Kang, Changhai Lin, Xiaoyan Liu, Ruqi Han “Electrical and Reliability Characteristics of High-K? HfO2 Gate Dielectric”, The 201st Meeting of The Electrochemical Society,(Philadelphia, PA from May 12-17), Symposium G1 (2002)

    2001

    • Jinfeng Kang, Xiaoyan Liu, Ruqi Han, Yangyuan Wang, G. J. Lian, Kun Xun, D. P. Yu, G. C. Xiong, S. C. Wu, Y. G. Wang, “Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment”, International Conference on Solid-State and Integrated Circuit Technology Proceedings Oct 22-Oct 25, p321-324 (2001)
    • Jinfeng Kang, Xiaoyan Liu, Dayu Tian, Wei Wang, Ruqi Han, Yangyuan Wang, “Characteristics of HfO2 Gate Dielectric With An Improved Surface Preparation Process”, 32nd IEEE Semiconductor Interface Specialists Conference (Washington, D.C.), Nov. 29-31, P-13 (2001)

    1995~2000:

    • Jinfeng Kang, Xiaoyan Liu , Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, Xudong Guan, Ruqi Han, Yangyuan Wang, "Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition", E-MRS-IUMRS-ICEM2000 (Strasbourg, France, May 30-June 2, 2000), L-I-7
    • Jinfeng Kang, Xiaoyan Liu , Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, Xudong Guan, Ruqi Han, Yangyuan Wang, "Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition"E-MRS-IUMRS-ICEM2000 (Strasbourg, France, May 30-June 2, 2000), L-I-7
    • J. F. Kang, X. Y. Liu, X. D. Guan, R. Q. Han, G. J. Lian, G. C. Xiong, “Epitaxial growth of Ba0.5Sr0.5TiO3 film and its dielectric properties associated with microstructure”, IUMRS-ICAM’99 (Beijing June13-18, 1999) F-66
    • Kang, J.F.; Xiong, G.C.; Lian, G.J.; Wang, Y.Y.; Han, R.Q.; “Epitaxial growth of CeO2 (100) films on Si(100) substrates by dual ion beams reactive sputtering”, International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, p 823-825
    • Wang, Yangyuan; Han, Ruqi; Liu, Xiaoyan; Kang, Jinfeng, “Challenges for physical limitations in Si microelectronics”, International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, p 25-30
    • Liu, Xiaoyan; Kang, Jinfeng; Han, Ruqi, “Influence of tunneling effect and inversion layer quantization effect on deep submicron MOSFET”, International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, p 432-434
    • LI Meiya, LIAN Guijun, KANG Jinfeng, GUO Jiandun, SHUNG Yungfeng and XIONG Guangcheng, “Epitaxial Growth of Perovskite Oxide Thin Films” , 98中日薄膜讨论会
    • 王阳元,张兴,康晋锋, 微电子芯片技术对材料的需求,材料科学及工程国际前沿学术报告会,北京燕郊,1998年9月24日--26日
    • XIONG Guangcheng, LIAN Guijun, KANG Jinfeng, and LI Meiya, “Growth Dependencies of Epitaxial Oxide Thin Films Prepared by Pulsed Laser Deposition”, IUMRS-ICA ‘97, Q-12, 1997
    • Kang Jinfeng, Han Ruqi, and Wang Yangyuan, “A Modified Propagation Characteristics Model of High-Tc Superconducting Interconnect for VLSI System”, Proceedings The Fourth International Conference on Solid-State and Integrated-Circuit Technology, 562 (Beijing, China, Oct.1995)

     

 

北京大学微电子学系新器件研究室(Novel Device Research Group),推荐采用IE4.0以上浏览器,800×600分辨率
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