刘晓彦  博士,教授,博士生导师,副系主任。1995年获北京大学青年科学基金。先后参加的科研项目有:国家教委“非晶硅有源矩阵液晶显示屏的研究”;国家重点科技项目(攻关)专题“GeSi/Si异质结双极晶体管(HBT)器件的研究”;国防科技预研项目:“深亚微米-纳米器件物理研究”;国家教育部重点学科项目:“突破微电子器件物理限制若干关键问题的研究”(子课题亚0.1微米体硅CMOS器件物理和模型模拟研究负责人);国防科技预研基金项目:“深亚微米半导体器件的蒙特卡罗模拟”(项目负责人之一);国家重点基础研究发展规划项目:<<系统芯片(System on a Chip)中新器件、新工艺的基础研究>> 的子课题:适于20~50纳米的器件模型、仿真及模拟软件基础研究的负责人。国家高技术研究发展计划(863计划) 超大规模集成电路设计专项中VDSM器件与互连线建模关键技术研究的负责人。目前研究工作主要集中在新型半导体器件结构,半导体器件模型、模拟等方面。合作出版著作1部,译著1部,发表论文50余篇,其中《微电子学概论》获教育部优秀教材二等奖。

 
论(译)著
1. 张兴、黄如、刘晓彦《微电子学概论》,北京大学出版社,1999年9月,全书共九章,本人编写了第二章半导体物理及半导体器件物理基础和第三章集成电路基础,2003年完成了该书第二版的修改工作。
2. 施敏主编,
刘晓彦、贾霖、康晋锋译《当代半导体器件物理》” (译著),科学出版社,2001年6月,全书共八章,本人翻译了其中的第三、五、八章并负责全书的初审和统稿
3. 甘学温,黄如,
刘晓彦,张兴,《纳米CMOS器件》, 科学出版社, 2003年8月,全书共六章,本人编写了第四章纳米CMOS器件中的栅工程。

教材
1、
刘晓彦 韩德栋《微电子学专业实验》,校内讲义 2002年7月,2003年7月修改

论文
1. Xiaoyan Liu, Jinfeng Kang, Ruqi Han, Direct Tunneling Current Model for MOS Devices with Ultra-thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect, Solid State Communication,Vol 125, n 3-4, January, 2003, p 219-223,被SCI、EI收录
2. Liu Xiaoyan, KANG Jinfeng, HAN Ruqi, Gate Current for MOSFETs with High K Dielectric Materials, Chinese J. Semiconductor Vol 23, n 10, October, 2002, p 1009-1013,被EI收录
3. Xiaoyan Liu, Jinfeng Kang; Lei Sun, Ruqi Han. Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics IEEE Electron Device Lett. Vol.23, No.8, 2002,270,被SCI、EI收录
4. Xiaoyan Liu; Shuzuo Lou; Zhiliang Xia; Dechao Guo; Huiwen Zhu; Jinfeng Kang; Ruqi Han, Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics, , 2001. Proceedings. 6th International Conference on Solid-State and Integrated-Circuit Technology, Volume: 1 , 2001 333 –336
5. Xiaoyan Liu; Kui Luo; Gang Du; Lei Sun; Jinfeng Kang; Ruqi Han, N channel SOI Schottky barrier tunneling transistors, Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on, Volume: 1 , 2001 Page(s): 562 –565
6. Xiaoyan Liu, Jinfeng Kang, Ruqi Han, The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron MOSFET’ Solid State Electronics, 44(2000), pp1435-1439,被SCI、EI收录,被Hou YT, Li MF,IEEE T ELECTRON DEV 48 (12): 2893-2898 DEC 2001引用
7. Xiaoyan Liu, Jinfeng Kang, Ruqi Han, Yangyuan Wang,Physics of sub 0.1 micron CMOS, AEARU 1st Microelectronics Workshop, Seoul, pp.5-7, 1999
8. 刘晓彦 刘恩峰 杜刚 刘弋波 夏志良 韩汝琦,纳米级MOSFET的模拟,半导体学报,Vol.24, 148, 2003年5月, 第二届纳米技术与应用会议邀请报告,2002
9. Sun Lei , Liu Xiaoyan, Du Gang, Han Ruqi, Monte Carlo simulation of Schottky contact with direct tunneling model , Semiconductor Science and Technology, vol. 18(6)), pp.576 2003, June, 被SCI、EI收录
10. Kang, Jinfeng; Liu, Xiaoyan; Tian, Dayu; Wang, Wei; Lian, Guijun; Xiong, Guangcheng; Han, Ruqi, The post-deposition anneal effects on the electrical properties of HfO2 gate dielectric deposited by ion beam sputtering at room temperature, Chinese Journal of Electronics, v 12, n 2, April, 2003, p 270-272被SCI收录
11. Enfeng Liu; Xiaoyan Liu; Ruqi Han, 3-D simulation of FINFET, will be published in Chinese J. Semiconductor, Sept. 2002, p 909-913被EI收录
12. Du Gang, Liu Xiaoyan, Sun Lei, Yue Jiaping, Han Ruqi, Patrice Houlet, Hideaki Fujitan Monte Carlo Simulation of 50 nm n-channel Schottky Barrier Tunneling Transistors Chinese Journal of Electronics Vol.11, No.2 Apr 2002 p200-203, 被SCI收录
13. 夏志良,刘晓彦,刘恩锋,韩汝琦,亚100nm多栅MOSFET的三维模拟,半导体学报,Vol.24, p140,2003.5
14. Huiwen Zhu, Xiaoyan Liu, Chao Shen, Jinfeng Kang , Ruqi Han, “Characterization of Sub-100nm MOSFETs With High-k Gate Dielectrics”, Chinese J. Semiconductor,Vol.22, No.9,1107 (2001), 被EI收录
15. 康晋锋,刘晓彦,王玮,俞挺,韩汝琦, 连贵君,张朝晖,熊光成, “CeO2高K栅介质薄膜的制备工艺及其电学性质研究”, 半导体学报, Vol.22(7), 865 (2001) 被EI收录
16. Jinfeng Kang, Xiaoyan Liu, Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, Xudong Guan, Ruqi Han, Yangyuan Wang, “Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition”, Microelectronic Engineering Vol.56(1-2), p 191-194 (2001) 被SCI、EI收录
17. Jinfeng Kang; Xiaoyan Liu; Ruqi Han; Yangyuan Wang; Lian, C.J.; Kun Xun; Yu, D.P.; Xiong, G.C.; Wu, S.C.; Wang, Y.G., Structural and electrical properties of CeO/sub 2//Si with nitrided interfacial layer by nitrogen ion beam bombardment, Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on , Volume: 1 , 2001 Page(s): 321 –324
18. Jinfeng Kang, Xiaoyan Liu, Dayu Tian, Wei Wang, Ruqi Han, Yangyuan Wang, “Characteristics of HfO2 Gate Dielectric With An Improved Surface Preparation Process”, 32nd IEEE Semiconductor Interface Specialists Conference (Washington, D.C.), Nov. 29-31, P-13 (2001)
19. 杜 刚,刘晓彦,孙 雷, 韩汝琦, 半导体器件蒙特卡罗模拟中保持电荷守恒的统计增强方法, 计算物理 2001 06 Vol.18, NO.6 NOV, 2001 Page(s):497-500
20. J.F.Kang, X.Y.Liu, R.Q.Han, G.J.Lian, and G.C.Xiong “The epitaxial growth of (Ba,Sr)TiO3 films and the electrical properties associated with the microstructures”, IUMRS-ICAM’99,F-066 1999
21. 王漪、韩汝琦、刘晓彦、崛口刚,超薄膜磁性材料上XY模型的临界现象,物理学报,Vol.52,No.7, July, 2003, p1776-1782, 被SCI收录
22. Liu, Meng; Kang, Jinfeng; Zhang, Jinghua; Liu, Xiaoyan; Han, Ruqi,A MOS-based behavioral macro-model for ferroelectric capacitors, Microelectronic Engineering, v 66, n 1-4, April, 2003, p 813-817, 被SCI、EI收录
23. Zhang, Jinghua; Kang, Jinfeng; Lou, Shuzuo; Liu, Meng; Lin, Changhai; Liu, Xiaoyan; Han, Ruqi , Improved sensing scheme for FeRAM, Microelectronic Engineering, v 66, n 1-4, April, 2003, p 695-700, 被SCI、EI收录
24. Kang, Jinfeng; Xun, Kun; Liu, Xiaoyan; Han, Ruqi; Wang, Yangyuan,Yu, D.P; Lian, G.J.; Xiong, G.C.; Wu, S.C.,Interfacial and structural characteristics of CeO2 films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment,Thin Solid Films, v 416, n 1-2, Sep 2, 2002, p 122-128, 被SCI、EI收录
25. Lin, Changhai; Kang, Jinfeng; Han, Dedong; Tian, Dayu; Wang, Wei; Zhang, Jinghua; Liu, Meng; Liu, Xiaoyan; Han, Ruqi,Electrical properties of Al2O3 gate dielectrics,Microelectronic Engineering, v 66, n 1-4, April, 2003, p 830-834, 被SCI、EI收录
26. 刘弋波,刘恩锋,刘晓彦,韩汝琦,亚50nm双栅MOS场效应晶体管的流体动力学模拟,半导体学报,Vol.24, p145,2003
27. Huiwen Zhu, Zhao Bairu, Xiaoyan Liu , Jinfeng Kang , Ruqi Han, Fabrication and electrical properties of titanium oxide by thermally oxidizing titanium on silicon, Chinese J. Semiconductor,Vol.23, No.4,337 (2002), 被EI收录
28. 孙 雷,杜 刚,刘晓彦, 韩汝琦, 蒙特卡罗方法模拟金属 -半导体接触的直接隧穿效应, 半导体学报2001 Vol.22, NO.11 NOV, 2001 Page(s):1364-1368, 被EI收录
29. Shendong Zhang; Ruqi Han; Xiaoyan Liu; Xudong Guan; Ting Li; Dacheng Zhang, A lithography independent gate definition technology for fabricating sub-100 nm devices, Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong , 2001 Page(s): 81 –84
30. Gang Du, Lei Sun, Xiaoyan Liu, Ruqi han Simulation 70nm MOSFET by a 2-D Full-Band Monte Carlo Device Simulator with a Quantum Mechanical Correction to the Potential. Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on , Volume: 2 , 2001 Page(s): 924 –927 获 “Best Poster Paper Award”
31. 张盛东,韩汝琦,刘晓彦,关旭东,李婷,张大成, A Novel Sub-50nm Poly-Si Gate Patterning Technology,半导体学报 2001 05,565 被EI收录
32. Lei Sun, Gang Du, Xiaoyan Liu, Ruqi Han, Full-Band Monte Carlo Simulation for Metal-Semiconductor Contact with Direct Tunneling Effect,Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on ICSICT, Volume: 2 , 2001 Page(s): 920 –923
33. Enfeng Liu; Changhai Lin; Xiaoyan Liu; Ruqi Han,Simulation of 100nm SOI MOSFET with FINFET structure,Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on ICSICT, Volume: 2 , 2001 Page(s): 883–886

 

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