2018年10月22日，美国圣母大学电机工程学系Alan Seabaugh教授应邀访问微纳电子学研究院，在微纳电子大厦103报告厅做了题为 “Switching dynamics of ferroelectrics and ionic gates for steep transistors and analog weight storage”的学术报告。
Switching dynamics of ferroelectrics and ionic gates for steep transistors and analog weight storage
Ferroelectric Zr-doped HfO2 (HZO) is a promising material for steep slope transistors and memory technology. For these applications, it is essential to understand and optimize the switching dynamics of the ferroelectric film. A pulsed measurement protocol is used to characterize the polarization reversal in HZO deposited by atomic layer deposition. The measurements are well described by a nucleation-limited switching model, which enables extraction of the minimum switching time and the probability distribution of local electric field variations in the polycrystalline film. The close model fit spanning 5 orders of magnitude in pulse duration indicates the applicability of this model to HZO. This characterization framework is being used to optimize the switching dynamics of ferroelectric HZO. Ionic gates offer an alternative polarizable dielectric. Recent experiments and modeling of the polyethylene oxide cesium perchlorate system revealed the first observation of Esaki tunneling in p-n junctions on WSe2. Molecular dynamic simulations show that electric double-layer formation in graphene/PEO:CsClO4/graphene capacitors takes place in less than 1 ns, putting it in a range of interest for electronics.