2018-10-25

英国剑桥大学工程系John Robertson院士到访微纳电子学研究院

  20181024日,英国皇家学会院士、剑桥大学John Robertson教授应邀访问微纳电子学研究院,在微纳电子大厦103报告厅做了题为 “Band Design and Materials Selection for Chalcogenide Selector Devices for RRAM and PRAM memories”的学术报告。

微纳电子学研究院院长黄如院士、王润声副教授、杨玉超研究员、贺明研究员,物理学院吕劲教授,以及20余名学生参加了报告会,并与报告人进行了深入、热烈的讨论。

                                                                            

                                                                            Band Design and Materials Selection for Chalcogenide Selector Devices for RRAM and PRAM memories

Many non-volatile storage class memories (like Intel's Xpoint device)will use the cross-point architecture. These require 'selector' devices to stop the conducting 'sneak paths' between unselected cells. Amorphous chalcogenides like a-GeSe_x behaving as 'Ovonic threshold switches‘ (OTS) are found to have some of the best performances. These materials/devices were discovered by Ovshinsky in 1968, but have had little fundamental analysis because people tended to focus on phase change memory materials (PCMs) instead. Here, the electronic properties of these materials is analysed and contrasted with PCMs, and I give the reason why a-GeSe_x performs better than the original Si-Te-As-Ge glasses proposed by vshinsky.


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