美国麻省理工学院Ruonan Han教授和德克萨斯A&M大学Yue Kuo教授到访微纳电子学研究院
2018年10月29日，美国麻省理工学院Ruonan Han教授和德克萨斯A&M大学Yue Kuo教授应邀访问微纳电子学研究院，在微纳电子大厦103报告厅做了题为 “Band Design and Materials Selection for Chalcogenide Selector Devices for RRAM and PRAM memories”和“Generalization of ULSICs, TFTs, and SSI-LEDs”的学术报告。
Chip-Scale Wave-Matter Interactions: New Frontier for RF-to-THz Sensors in Silicon
Since the invention of radar in early 1900s, innovations in RF sensing have lasted for an entire century; now, a complete radar system can be implemented inside a single silicon chip. So what is the next frontier for integrated RF-to-THz sensors? Essentially, radars and millimeter-wave imagers remotely detect large-scale objects that are insensitive to wave frequencies. In this talk, we show that new opportunities are opened up (1) when we use high-precision, frequency-selective waves to direct interact with the quantum behaviors of microscopic particles and (2) when we confine such operations at chip scale.
To showcase this idea, we introduce a few sensor chip prototypes in silicon, which utilize various modalities of wave-matter interactions in RF-to-THz domains. Targeting at the rotational modes of gas molecules at low-THz, we present a dual-frequency-comb CMOS spectrometer, which performs high-parallelism spectral sensing and ultra-high-selectivity molecular detection in 220~320GHz. Using the same rotational mode, we also built a CMOS molecular clock, which locks its 80-MHz output to the 231.061-GHz transition line of carbonyl sulfide (OCS) gas confined in a small volume. The clock consumes only 66 mW, while delivering a long-term frequency stability at 10-10 level (and potentially below 10-11). Next, towards a fully-electronic probing of the vibrational modes in large bio-molecules, we also report a SiGe radiator array which delivers a record radiated power of 0.1 mW at 1 THz. Lastly, we also present emerging sensing techniques in RF frequencies. In specific, a room-temperature, CMOS quantum magnetometer is demonstrated with vector-field sensing capability. Different from Hall sensors, this electro-optical chip probes the Zeeman splitting of nitrogen-vacancy (NV) centers in a diamond attached to the chip surface, and delivers nT/Hz1/2 level sensitivity. This new catogery of low-cost and compact RF-to-THz sensors, to be presented in this talk, are expected to greatly advance the capabilities of chemical analysis, bio-medical diagnosis/research, navigation, networking, security and so on.
Generalization of ULSICs, TFTs, and SSI-LEDs
MOSFETs and TFTs are key devices in today’s two largest semiconductor industries. They are operated based on the same principle and facing common challenges. The development of the former is to shrink the device size closely following the Moore’s Law. The advancement of the latter is to increase the array size and density. The success of both technologies depends on the thorough understanding of the complicated relationship among materials, processes, and devices. The ultimate challenge in both technologies is to transmit signals by light. In this talk, the speaker briefly reviews and discusses some of his works in above areas.