师资力量

何进

姓名:何进

职称:教授

研究所:微电子学研究院(所)

研究领域:微纳电子器件和物理,集成电路芯片设计技术

办公电话:86-10-6275

电子邮件:frankhe@pku.edu.cn

个人主页:

 

详细简历

 

天津大学电子工程本科毕业,电子科技大学微电子与固体电子学硕士和博士毕业,北京大学微电子所博士后。 2001-2005年美国伯克利加州大学电子与计算机工程系博士后和研究员。2005回国任北京大学信息科学技术学院教授,博士生导师,建立纳太器件和电路研究室。2010年开始任职北京大学深圳系统芯片设计重点实验室室主任。 曾任南通大学和香港科技大学客座教授,中国科学院兼职研究员,日本广岛大学访问教授,UC BERKELEY EECS访问学者和研究员。

 

教育背景

 

1984年9月至1988年7月:  天津大学电子工程系电子元器件专业, 本科生;

1990年9月至1993年4月:  电子科大微电子学专业,硕士生;

1996年9月至1999年9月:  电子科大微电子专业, 博士生,导师陈星弼院士;

1999年9月到2001年5月: 北京大学微电子所博士后

 

主要研究领域

 

主要研究领域为微纳电子器件技术,半导体芯片技术和先进集成电路设计。

 

代表性学术论著

 

[1]Khawar Sarfraz, Jin He, Mansun Chan, "A 140mV Variation-Tolerant Deep Sub-Threshold SRAM in 65nm CMOS," IEEE Journal of Solid-State Circuits (IEEE JSSC), Vol: 52, No:8, pp.2215-2220, August, 2017.

[2] Siu-Fung Leung, Qianpeng Zhang,Mohammad Mahdi Tavakoli, Jin He, Xiaoliang Mo,and Zhiyong Fan,“Progress and Design Concerns of Nanostructured Solar Energy Harvesting Devices,”Small,12, 2536-2548(2016).

[3] Aashir Waleed, Qianpeng Zhang, Mohammad Mahdi Tavakoli, Siu-Fung Leung, Leilei Gu, Jin He, Xiaoping Mo and Zhiyong Fan, "Performance Improvement of Solution-processed CdS/CdTe Solar Cells with a Thin Compact TiO2 Buffer Layer", Sci. Bull.,Vol. 60(1)86-91:2016. http://link.springer.com/article/10.1007/s11434-015-0963-0

[4] Mohammad Mahdi Tavakoli, Leilei Gu, Yuan Gao, Claas Reckmeier, Jin He, Andrey L. Rogach, Yan Yao, Zhiyong Fan,  "Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method"  Nature Scientific Reports, SREP-15-08034A, 2015

[5] M.M.Tavakoli, Siu-Fung Leung, Kwong-Hoi Tsui, Qianpeng Zhang, Jin He, Yan Yao, Dongdong Li, and Zhiyong Fan,  "Highly Efficient Flexible Perovskite Solar Cell with Anti-reflection and Self-cleaning Nanostructures ". ACS NanoDOI 10.1021/acsnano.5b04284, 2015

[6] Yuanjing Lin, Qingfeng Lin, Xue Liu, Yuan Gao, Jin He, Wenli Wang, Zhiyong Fan, “A Highly Controllable Electrochemical Anodization Process to Fabricate Porous Anodic Aluminum Oxide Membranes”, Nanoscale Research Letters, 10:4952015.

[7] Hao Wang, Hongyu He, Sheng Chang, Yue Hu, Jin He, QJ Huang, Gaofeng Wang,  "A Novel Barrier Controlled Tunnel FET". IEEE Electronics Device Letters EDL-35No.7, pp.798-800, July, 2014.

[8]  Lin Li, Lining Zhang, Kit Chun Kwong, Jin He, Mansun Chan, “Phase-Change Memory with Multi-Fin Thin-Film-Transistor Driver Technology."  IEEE Electronics Device Letters EDL-33Vol. 33, No. 3, , pp. 405-407March2012.

[9] Lining Zhang, Lin Li, Jin He, Mansun Chan, “ Modeling Short Channel Effect of Elliptic Gate-All-Round MOSET by Effective Radius” . IEEE Electronics Device Letters EDL-32No.8, pp.1188-1191, 2011.

[10]  Min Shi, Jin He, Lining Zhang, Chenyue Ma, Zingye Zhou, Haijun Lou, Hao Zhuang, Ruonan Wang, Yongliang Li, Yong Ma, Wen Wu, Wenping Wang, and Mansun Chan, “Zero Mask Contact Fuse for One Time Programmable Memory in Standard CMOS Processes”, IEEE Electronic Device LettersEDL-32No.7, pp.955-957, 2011.

[11] Ricky M. Y. Ng, Tao Wang, Feng Liu, Xuan Zuo, Jin He, and Mansun Chan, “Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation”pp. 520-522, IEEE Electron Device Letters, EDL-30, No.5, 2009.

[12] Jin He, Xuemei Xi, Mansun Chan, Senior Member, Kanyu Cao, Student Member, Chenming Hu, Yingxue Li, Xing Zhang, Ru Huang, and Yangyuan Wang, “Normalized Mutual Integral Difference Method to Extract Threshold Voltage of MOSFETs. IEEE Electron Device Letters, Vol. 23, No. 7, pp.428-430, JULY 2002

[13] Jin He, Xing Zhang, Yangyuan Wang, and Ru Huang,New Method for Extraction of MOSFET Parameters. IEEE Electron Device Letters, Vol. 22, pp.397-399, no. 12, DECEMBER, 2001.

[14] Yue Hu, Hao Wang, Caixia Du, Miaomiao Ma, Mansun Chan, Jin He , and Gaofeng Wang, “A High-Voltage (> 600 V) N-Island LDMOS with Step-Doped Drift Region in Partial SOI Technology” IEEE Transactions on Electron DevicesTED-63, No.2, Dec., 2016, PP. 744-750.

[15] Hongyu He, Jin HeHao Wang, Wanling Deng, Liu Yan, and Xueren Zheng, "Trapped-Charge-Effect-Based Above-Threshold Current Expressions for Amorphous Silicon Thin-Film Transistors Consistent With Pao-Sah Model”。IEEE Transactions on Electron DevicesTED-61, No.11, pp. 3744-3750, Nov., 2014.

[16] Jin He, Cheng Wang, Haijun Lou ,  Ruonan Wang , Lin Li, Hailang Liang,  Wei Wu , Yun Ye,  Ma Yutao, Qin Chen, “A Compact CMOS Compatible Oxide Antifuse with Polysilicon Diode Driver.”  IEEE Transactions on Electron DevicesTED-59, No. 9, September, pp. 2539-2541, 2012.

[17] Xingye Zhou, Feng Liu, Lining Zhang, Cheng Wang, Jin He, Xing Zhang , and Mansun Chan, “New Unified Scale Length for Four-Terminal Double-Gate MOSFETs.” IEEE Transactions on Electron DevicesTED-59, No.7, pp. 1997-1999, July, 2012.

[18]  Haijun Lou, Lining Zhang, Yunxi Zhu, Xinnan Lin, Jin He, Mansun Chan, “Performance Enhancement of Junctionless Nanowire Transistors With Dual-Material-Gate.” IEEE Transactions on Electron DevicesTED-59, No.7, pp. 1829-1836, July, 2012.

[19]  Lining Zhang, Jin He, Xinnan Lin, Mansun Chan, "An Analytical Capacitance Model for Double-Gate Tunnel-FETs" , IEEE Transactions on Electron DevicesTED-59, No. 12, December 2012, pp. 3217-3223.

[20]  Lin Li Jin He Mansun Chan "One-Time-Programmable Memory in LTPS TFT Technology with Metal Induced Lateral Crystallization" IEEE Transactions on Electron Devices , vol. 59, no. 1, January 2012, pp. 145-150.  

[21] Hongyu He, Xueren Zheng, Jin He and Mansun Chan, “Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent with Pao-Sah Model”, IEEE Transactions on Electron Devices, Vol.59, No.11, pp. 3130-3132, Nov.., 2012.

[22] Jiale Huang, Minhao Zhu, Shengqi Yang, Pallav Gupta, Wei Zhang, Steven M.Rubin, Gilda Garret, and Jin He, “A physical design tool for carbon nanotube field effect transistor circuits”, ACM J. Emerg. Technol. Comput. Syst., Vol.8, No.3, pp.25:1-20, Aug. 2012.

[23] Kit Chun Kwong, Jin He, Mansun Chan, "Phase Change Memory RESET Model Based on Detailed Cell Cooling Profile".  IEEE Transactions on Electron DevicesTED-58, No.10, pp. 3625-3628, 2011 .

[24]  Lining Zhang:Jin HeHaijun Lou Mansun Chan "Uniaxial Strain Effect on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFET" IEEE Transactions on Electron Devices, TED-58, No.11, pp. 3829-3836, 2011.

[25] Jian Zhang, Lining Zhang, Jin He, and Mansun Chan, “A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors”, Journal of Applied Physics, Vol. 107, No.5, 054507, 2010.

[26]  Zhifeng Yan, Jingxuan Zhu, Yinglei Wang, Xinnan Lin, Jin He, “Numerical study on heterodyne terahertz detection in field effect transistor”, Optics Express, Vol.18, No.8, pp.7782-7789, 2010.

[27]  Lining Zhang, Jin He, Yue Fu, Feng Liu, Yan Song, Jian Zhang , and Xing Zhang An Analytic Model for Nanowire MOSFETs with Ge/Si Core/Shell Structure。” IEEE Transactions on Electron Devices, TED-55, No. 11, Nov., 2008.

[28]  Feng Liu, Jin He, Jian Zhang, Yu Chen, and Mansun Chan, “  A non-charge-sheet analytic model for symmetric double-gate MOSEFTs with smooth transition between partially- and fully- depleted operation modes”, IEEE Transactions on Electron Devices, Vol. 55, No. 12, Dec., 2008

[29]  Feng Liu, Jin He, Lining Zhang, Jian Zhang, Jinghua Hu, Chenyue Ma, and Mansun Chan, “A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body ”, IEEE Transactions on Electron Devices, TED-55, No. 38, Aug., 2008.

[30]  Feng Liu, Jin He, Yue Fu, Jinhua Hu, Wei Bian, Yan Song, Xing Zhang, Mansun Chan, "Generic Carrier-Based Core Model for Undoped Four-Terminal Double Gate MOSFETs Valid for Symmetric, Asymmetric and Independent Gate operation modes," IEEE Transactions on Electron Devices, TED-55, No. 3, March., 2008

[31]  Jie Yang, Jin He, Feng Liu, Lining Zhang,  Feilong Liu, and Xing Zhang, “A compact model of silicon-based nanowire MOSFETs for circuit simulation and design .” IEEE Transactions on Electron Devices, TED-55, No. 11, Nov., 2008.

[32]  Jin He, Feng Liu, Jian Zhang, Jie Feng, Jinhua Hu, Shengqi Yang,“ A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETs.” IEEE Transactions on Electron Devices, TED-54, No.5, pp.1203-1209, May 2007

[33]  Jin He, Wei Bian, Yandong Tao, Shenqi Yang, and Xu Tang, “Analytic Carrier-Based Charge and Capacitance Model for Long Channel Undoped Surrounding-Gate MOSFETs.” IEEE Transaction on Electron Devices, TED-54, No.6, pp.1478-1785, June, 2007

[34]  Bian Wei, Jin He, Yadong Tao, Ming Fang, Jie Feng, “ An analytic potential-based model for undoepd nanoscale surrounding-gate MOSFETs,” IEEE Transactions on Electron Devices, TED-54, No. 9, Sept., 2007

[35]  Y. Wang, C. Xu, J. Li, J. He and M. Chan, “A CMOS Image Sensor Utilizing Opacity of Nano-Metallic Particles for DNA Detection.”  IEEE Transactions on Electron Devices, TED-54, pp.1549-1553, June 2007

[36]  Jin He, Wei Bian, Yadong Tao, Feng Liu, Yan Song, Jinhua Hu, Xing Zhang, Wen Wu, Ting Wang, and Mansun Chan,"Linear cofactor difference extrema of MOSFET’s drain current and application to parameter Extraction." IEEE Transactions on Electron Devices, TED-54, No.4, pp.874-878, April 2007

[37]  Jin He, Mansun Chan, Xing Zhang, Yangyuan Wang, "An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation." IEEE Transactions on Electron Devices, TED-53, No.9, pp.2082-2090, Sept., 2006

[38]  Jin He, Mansun Chan, Xing Zhang, Yangyuan Wang, "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region." IEEE Transactions on Electron Devices, TED-53, No.9, pp.2008-2016, Sept., 2006

[39]  Alain Chun Keung Chan, Tsz-Yin Man, Jin He, Kam-Hung Yuen, Wai-Kit Lee, and Mansun Chan, “SOI Flash Memory Scaling Limit and Design Consideration Based on 2-D Analytical Modeling.” IEEE Transactions On Electron Devices, TED-51, No.12, pp.2054-2060, Dec., 2004

[40]  Jin He, Xing Zhang, Ru Huang, and Yangyuan Wang, “Linear Cofactor Difference Method of MOSFET Subthreshold Characteristics for Extracting Interface Traps Induced by Gate Oxide Stress Test. IEEE Transactions on Electron Devices, TED-49, No.2, pp.331-334, FEBRUARY 2002

[41]  Jin He, Yangyuan Wang, Xing Zhang, Xuemei Xi, Mansun Chan, Ru Huang, and Chenming Hu, “A Simple Method for Optimization of 6H-SiC Punch-Through Junctions Used in Both Unipolar and Bipolar Power Devices.” IEEE Transactions on Electron Devices, TED-49, No. 5, pp.933-937, MAY 2002

[42]  Jin He, Xuemei Xi, Mansun Chan, Chenming Hu, Yingxue Li, Xing Zhang, Ru Huang, and Yangyuan Wang, Equivalent Junction Method to Predict 3-D Effect of Curved-Abrupt p-n Junctions. IEEE Transactions on Electron Devices, TED-49, No. 7, pp.1322-1325, July, 2002.

[43]  Jin He, Xing Zhang, and Yangyuan Wang, “Equivalent Doping Profile Transformation: A Semi-Empirical Analytical Method for Predicting Breakdown Characteristics of an Approximate Single-Diffused Parallel-Plane Junction.” IEEE Transactions on Electron Devices, TED-48, No.12, pp.2763-2769, Dec., 2001

[44] Lining Zhang, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-13, 2012,San Francisco, USA

[45] 英文专著:“nanowire implantations and applications”中“Silicon-based nanowire MOSFETs: from process and device physics to simulation and modeling一章, Intech 出版社,2012年7月:国际下载量到2017年9月已经突破8000次。

[46] 英文专著:“Plasmonics: Principles and Applications” 中“Application of surface plasmon polaritions in CMOS digital imaging”一章,Intech 出版社,2012年7月。

[47] 英文专著: “Toward Quantum FinFET” 中 “ Modeling of FinFETs for CMOS circuit application”一章, SPRINGER出版社,2013年。

[48] 英文专著:“Semiconductor memory”中“Phase change memory: modeling and simulation”一章3,CRC Press出版社,2014年。

[49] 英文专著:“Advances in Microelectronics: Reviews”中“Reliability Study on Nanoscale CMOS Device”一章,IFSA Publishing出版社,2017年。

[50] BSIM4.3.0Manual: Xuemei Xi, Mohan Dunga,Jin He,Weidong Liu, Kangyu M.Cao, Xiaodong Jin, Jeff J.Ou, Mansun Chan, Ali.M.Nakeijad and Chenming Hu,BSIM4.3.0 MOSFET model, user’s Manual,  Electron Research Laboratory (ERL), Department of Electronic Engineering and Computer Sciences, University of California,  Berkeley, CA, USA. Copyright@2003 The Regents of University of California, All Rights Reserved。