师资力量

韩德栋

 

韩德栋  博士  副教授  硕士生导师

    北京大学微电子与固体电子学专业博士,信息科学技术学院微电子系副教授,信息科学技术学院工会副主席,新器件研究室副主任。2008-2009年在日本庆应大学做访问学者一年。主要研究领域包括新型半导体材料;新型MOS器件结构;新型薄膜晶体管的工艺技术、平板显示和柔性显示技术研究等。主要研究成果包括:2002年在Si衬底上制备成功HfO2K绝缘栅介质膜,2005年在Ge衬底制备成功TiGeNiGe等材料,2007年在Ge衬底上制备成功MOS器件,2008年在Si衬底上制备成功氧化物薄膜晶体管,2010年在玻璃衬底上制备成功氧化物薄膜晶体管。先后主持了国家自然基金项目锗基MOS器件的关键工艺技术研究和全透明氧化物薄膜晶体管的工艺技术及物理机理研究;参加了国家973项目纳米尺度新结构器件理论及模型模拟研究和新型低功耗集成电路材料基础研究课题;参加了国家自然基金项目ZnO稀磁半导体薄膜的制备与相关器件研究、纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究、面向SoC的单胞CMOS结构和集成技术研究、新型50纳米部分耗尽型SOI器件研究等多项国家级科研项目以及北京市科技计划TFT有源OLED显示屏关键技术研发项目。已发表科技论文四十余篇,申请发明专利十余项。非常欢迎喜欢从事新型半导体材料及器件工艺实验研究的学生报考和咨询。

E-Mail: handedong@pku.edu.cn

电话:010-62766516

地址:北京大学微纳电子大厦445

 

 

 

部分论文及申请专利:

1. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Kang Jinfeng, Liu XiaoYan, Du Gang, Liu LiFeng, and Han RuQi “Fabrication and Characteristics of ZnO MOS Capacitors with High-K HfO2 Gate Dielectrics”, Science China E, 2010, Vol.53 No.9: p.2333-2336

2. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, “Comparative study on fabrication methods of ZnO thin films”, European Materials Research Society (E-MRS) 2010 fall meeting, Poland.

3. Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong Zhang, Flexible thin-film transistors fabricated on plastic substrate at room temperature, European Materials Research Society (E-MRS) 2012 spring meeting, France.

4. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, “Annealing Effect on characteristics of ZnO-based thin-film transistors”, European Materials Research Society (E-MRS) 2010 fall meeting, Poland.

5. Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yicheng Ren, Shaojuan Li, Yi Wang, and Shengdong Zhang, High performance ZnO-based thin film transistor with high-κ gate dielectrics fabricated at low temperature. TechConnectWorld2012,U.S.A.

6. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, Satoru Matsumoto, and Yuji Ino, “Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display”, Science China F, 2012, 55(6), p1441-1445

7. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, Satoru Matsumoto, and Yuji Ino, “Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature”Science China F, 2012, 55(4): 951-955

8. Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yi Wang and Shendong Zhang, “High performance Aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature”, European Materials Research Society (E-MRS) 2012 spring meeting, France.

9. Han D.D., Kang J.F., Liu X.Y., Sun L., Luo H., and Han R.Q., “Fabrication and characteristics of high-K HfO2gate dielectrics on n- germanium”. Chin. Phys., 2007. 16(1): p. 245-248

10. Han D.D., Wang Y., Tian D.Y., Wang W., Liu X.Y., Kang J.F., and Han R.Q., “Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates”. Microelectron.Eng., 2005. 82(2): p. 93-98.

11. Han D.D., Liu X.Y., Kang J.F., Xia Z.L., Du G., and Han R.Q., “Fabrication and characteristics of Ni-germanide Schottky contacts with Ge”. Chin. Phys., 2005. 14(5): p. 1041-1043.

12. Han D.D., Kang J.F., Lin C.H., and Han R.Q., “Reliability characteristics of high-K gate dielectrics HfO2inmetal-oxide semiconductor capacitors”. Microelectron.Eng., 2003. 66(1-4): p. 643-647.

13. Han D.D., Kang J.F., Lin C.H., and Han R.Q., “Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics”. Chin. Phys., 2003. 12(3): p. 325-327.

14. Yicheng Ren, Dedong Han, Yi WangPerformance of Asynchronous Double-gate Poly-Si Thin-film Transistors, China Display/Asia Display 2011, pp. 552-555

15. Yicheng Ren, Dedong Han, Lei SunGang Du, Shengdong Zhang. Xiaoyan Liu, Yi Wang Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs, Electron Device and Solid-State Circuits 2011, 41

16. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Kang Jinfeng, Liu Xiaoyan, Du Gang, Liu Lifeng, and Han Ruqi, “Fabrication and characteristics of ZnO-based thin film transistors”, ICSICT 2008 - 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008, p 982-984, 93

17. Sun Bing, Liu Li-Feng, Han De-Dong, Wang Yi, Liu Xiao-Yan, Han Ru-Qi, and Kang Jin-Feng, “Improved resistive switching characteristics of Ag-doped ZrO2 films fabricated by sol-gel process”, Chinese Physics Letters, June 2008, vol. 25, (no. 6), pp.2187-2189.

18. B. Sun, L. F. Liu, Y. Wang, D. D. Han, X. Y. Liu, R. Q. Han, and J. F. Kang, “Bipolar Resistive Switching Behaviors of Ag/Si3N4/Pt Memory Device”, The 9th International Conference on Solid State and Integrated Circuit Technology, October 2008, pp.925-927

19. Xu N, Liu LF, Sun X, Liu XY, Han, DD, et al, Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories, APPLIED PHYSICS LETTERS, 2008, 92(23): 232112

20. Han D.D., Kang J.F., Liu X.Y., Han R.Q., “Electrical and Reliability Characteristics of High-K HfO2 Gate Dielectrics”, 201st Meeting of The Electrochemical Society20025

21. Han D.D., Liu X.Y., Kang J.F., Xia Z.L., Du G., Han R.Q., Ni Germanide Schottky Contact with Ge, Electrochemical Society International Semiconductor Technology Conference (ISTC)2004, 9

22. Jian Cai, Dedong Han, Wei Wang, Liangliang Wang, Yi Wang and Shendong Zhang, “High performance RF sputtering deposited AZO thin-film transistors after a post-annealing process”, The International Workshop on Engineering Technology and Engineering Management, 2012

23. Wei Wang, Dedong Han, Jian Cai1, Youfeng Geng, Liangliang Wang, Yicheng Ren, Hao Deng, Yi Wang and Shengdong Zhang, “Al-doped ZnO Thin-Film Transistors on Flexible Plastic Substrate”, The Nineteenth International Workshop on Active-matrix Flatpanel Displays and Devices, 2012, 7,Japan

 

申请专利:

1. 韩德栋,王漪,张盛东,孙雷,张韬,任奕成,康晋锋,刘晓彦,韩汝琦,二次光刻制备薄膜晶体管的方法,申请号:201010504099.0

2. 韩德栋,王漪,张盛东,孙雷,张韬,任奕成,韩汝琦,一种氧化锌基薄膜晶体管及其制备方法,申请号:201010275718.3

3. 韩德栋,王漪,张盛东,孙雷,张韬,任奕成,康晋锋,刘晓彦,韩汝琦,一种氧化锌基肖特基薄膜晶体管申请号:201010547529.7

4. 韩德栋,蔡剑,王薇,王亮亮,王漪,张盛东,任奕成,刘晓彦,康晋锋,一种顶栅氧化锌薄膜晶体管的制备方法,申请号:201110423372.1

5. 王漪,蔡剑,王薇,韩德栋,王亮亮,任奕成,张盛东,刘晓彦,康晋锋,一种顶栅自对准氧化锌薄膜晶体管的制备方法,申请号:201110401730.9

6. 韩德栋,王薇,蔡剑,王漪,张盛东,王亮亮,任奕成,刘晓彦,康晋锋,一种塑料衬底上制备薄膜晶体管的制备方法,申请号:201110406897.4

7. 王漪,孙雷,韩德栋,刘力锋,康晋锋,刘晓彦,张兴,韩汝琦,一种氧化钛掺钴室温稀磁半导体材料的制备方法,申请号:200710001132.6

8. 王漪,孙雷,韩德栋,刘力锋,康晋锋,刘晓彦,张兴,韩汝琦,一种氧化锌掺钴室温稀磁半导体材料的制备方法,申请号:200710003498.7

9. 王漪,王亮亮,韩德栋,蔡剑,王薇,耿友峰,任奕成,张盛东,刘晓彦,康晋锋,一种底栅自对准氧化锌薄膜晶体管的制备方法,申请号:201210050309.2

10. 张盛东,贺鑫,王漪,韩德栋,韩汝琦,一种薄膜晶体管的制作方法,申请号: 201110020661

11. 张盛东,韩汝琦,韩德栋,一种FinFET晶体管的制作方法,申请号:201110001128

12. 王漪,蔡剑,王薇,韩德栋,王亮亮,任奕成,张盛东,刘晓彦,康晋锋,一种顶栅自对准氧化锌薄膜晶体管的制备方法,申请号:201110401730.9

13. 王漪,蔡剑,韩德栋,王亮亮,任奕成,张盛东,孙雷,刘晓彦,康晋锋,一种3D氧化物半导体薄膜晶体管及其制备方法,申请号:201210175109.X

14. 韩德栋,蔡剑,王漪,王薇,王亮亮,任奕成,张盛东,刘晓彦,康晋锋,一种氧化锌薄膜晶体管的制备方法,申请号:201210008323.6

15. 韩德栋,蔡剑,刘力锋,王薇,王亮亮,耿友峰,王漪,张盛东,刘晓彦,康晋锋,一种薄膜晶体管及其制备方法,申请号:201210202201.0

16. 韩德栋,王薇,蔡剑,王亮亮,耿友峰,刘力锋,王漪,张盛东,刘晓彦,康晋锋,一种在柔性衬底上的薄膜晶体管的制备方法,申请号:201210213660.9