师资力量

孙仲

职称:研究员

研究方向:存内计算,机器学习,阻变存储器(忆阻器)

电子邮件:zhong.sun@pku.edu.cn

办公电话:010-62750967

个人主页:scholar.pku.edu.cn/zhong_sun

教育及工作经历

2020年至今,北京大学,研究员,北大博雅青年学者,国家高层次青年人才
2016 – 2020,米兰理工大学,博士后
2011 – 2016,清华大学,获博士学位
2007 – 2011,南开大学,获学士学位

研究简介

长期从事阻变存储器及新型计算范式研究,相关论文发表在PNAS、Science Advances、Nature Communications、IEEE TCAS-I/II等期刊,曾获意大利知识产权一等奖。

目前,主要研究兴趣包括:

  1. 模拟矩阵计算,包括基本矩阵计算单元设计、模拟电路与模拟计算理论,及面向机器学习、科学计算、无线通信等领域的应用;
  2. 基于阻变动力学的神经网络模型,包括阻变存储器电路的动力学特性与应用、吸引子网络理论与算法;
  3. 新原理阻变器件,包括器件的创新设计与优化、器件的精准写入机制设计等方面,实现高性能器件与阵列的制备。

本课题组拟每年招收1-2名博士生,面向微电子、电子、物理、通信等专业的学生招收。常年招聘博士后,待遇从优。同时欢迎本科生年轻朋友加入团队一起工作!

代表性论文

  1. Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, W. Wang, D. Ielmini, Solving matrix equations in one step with cross-point resistive arrays. Proc. Natl Acad. Sci. USA 2019, 116, 4123-4128.
  2. Z. Sun, G. Pedretti, A. Bricalli, D. Ielmini, One-step regression and classification with crosspoint resistive-memory arrays. Sci. Adv. 2020, 6, eaay2378.
  3. Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, D. Ielmini, In-memory PageRank accelerator with a crosspoint array of resistive memories. IEEE Trans. Electron Devices 2020, 67, 1466-1470.
  4. Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, D. Ielmini, Time complexity of in-memory solution of linear systems. IEEE Trans. Electron Devices 2020, 67, 2945-2951.
  5. Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, D. Ielmini, In-memory eigenvector computation in time O(1). Adv. Intell. Syst. 2020, 2, 2000042.
  6. Z. Sun, R. Huang, Time complexity of in-memory matrix-vector multiplication. IEEE Trans. Circuits Syst. II, Exp. Brief 2021, 68, 2785-2789.
  7. S. Wang, Z. Sun, Y. Liu, S. Bao, Y. Cai, D. Ielmini, R. Huang. Optimization Schemes for In-Memory Linear Regression Circuit With Memristor Arrays. IEEE Trans. Circuits Syst. I Regul. Pap. 2021, 68, 4900-4909.
  8. Z. Sun, E. Ambrosi, A. Bricalli, D. Ielmini, Logic computing with stateful neural networks of resistive switches. Adv. Mater. 2018, 30, 1802554.
  9. Z. Sun, Y. G. Zhao, M. He, L. Gu, C. Ma, K. J. Jin, D. Y. Zhao, N. N. Luo, Q. H. Zhang, N. Wang, W. H. Duan, C. W. Nan, Deterministic role of concentration surplus of cation vacancy over anion vacancy in bipolar memristive NiO. ACS Appl. Mater. Interfaces 2016, 8, 11583.
  10. W. Wang, M. Wang, E. Ambrosi, A. Bricalli, M. Laudato, Z. Sun, X. Chen, D. Ielmini, Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices. Nat. Commun. 2019, 10, 81.