师资力量

孙仲

职称:研究员

研究方向:存内计算,机器学习,阻变存储器(忆阻器)

电子邮件:zhong.sun@pku.edu.cn

办公电话:010-62750967

个人主页:scholar.pku.edu.cn/zhong_sun

 

教育及工作经历

2016 - 2020,米兰理工大学,博士后

2011 - 2016,清华大学,获博士学位

2007 - 2011,南开大学,获学士学位

研究简介

长期从事阻变存储器(忆阻器)相关研究,具有跨学科的研究经验,包含底层的器件物理、材料,及上层的电路、人工智能算法和应用等方面。近几年的研究成果发表在PNAS、Science Advances、Nature Communications、Advanced Materials及IEEE T-ED等期刊,申请PCT专利1项(2019年意大利年度最佳专利)。担任IEEE EDL、IEEE T-ED、IEEE T-CAS、IEEE T-Nano、Nanoscale等期刊,ISCAS、AICAS等国际会议的审稿人。2019年获意大利政府颁发的知识产权一等奖。

本课题组招收对新型存储器、存内计算、人工智能硬件与应用等方向感兴趣的博士生、博士后,同时欢迎本科生年轻朋友加入团队一起工作!

代表性论文

  1. Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang & Daniele Ielmini*, Solving matrix equations in one step with cross-point resistive arrays. Proc. Natl Acad. Sci. USA 116, 4123-4128 (2019). (Media Coverage: Phys.org, Yahoo, EurekAlert!, Askanews, Radio 24…)
  2. Zhong Sun, Giacomo Pedretti, Alessandro Bricalli & Daniele Ielmini*, One-step regression and classification with cross-point resistive memory arrays. Sci. Adv. 6, eaay2378 (2020). (Media Coverage: TechXplore, Technology Networks, SingularityHub, The Mandarin…)
  3. Zhong Sun, Elia Ambrosi, Alessandro Bricalli & Daniele Ielmini*, Logic computing with stateful neural networks of resistive switches. Adv. Mater. 30, 1802554 (2018).
  4. Zhong Sun*, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli & Daniele Ielmini*, Time complexity of in-memory solution of linear systems. IEEE Trans. Electron Devices (2020). DOI: 10.1109/TED.2020.2992435
  5. Zhong Sun*, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli & Daniele Ielmini*, In-memory eigenvector computation in time O(1). Adv. Intell. Syst. (2020). https://doi.org/10.1002/aisy.202000042
  6. Zhong Sun, Elia Ambrosi, Giacomo Pedretti, Alessandro Bricalli & Daniele Ielmini*, In-memory PageRank accelerator with a crosspoint array of resistive memories. IEEE Trans. Electron Devices 67, 1466-1470 (2020).
  7. Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen* & Daniele Ielmini*, Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices. Nat. Commun. 10, 81 (2019).
  8. Zhong Sun, Yonggang Zhao*, Min He, Lin Gu, Chao Ma, Kuijuan Jin, Diyang Zhao, Nannan Luo, Qinghua Zhang, Na Wang, Wenhui Duan & Ce-Wen Nan, Deterministic role of concentration surplus of cation vacancy over anion vacancy in bipolar memristive NiO. ACS Appl. Mater. Interfaces 8, 11583 (2016).
  9. Zhong Sun, Linlin Wei, Ce Feng, Peixian Miao, Meiqi Guo, Huaixin Yang, Jianqi Li & Yonggang Zhao*, Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application. Adv. Electron. Mater. 3, 1600361 (2017).
  10. Diyang Zhao, Shuang Qiao, Yuxiang Luo, Aitian Chen, Pengfei Zhang, Ping Zheng, Zhong Sun, Minghua Guo, Fu-kuo Chiang, Jian Wu, Jianlin Luo, Jianqi Li, Satoshi Kokado, Yayu Wang & Yonggang Zhao*, Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States. ACS Appl. Mater. Interfaces 9, 10835 (2017).