师资力量

唐克超

职称:助理教授,研究员
 
单位:微纳电子学系
 
电子邮箱:tkch@pku.edu.cn
 
个人主页:http://scholar.pku.edu.cn/kechao_tang

教育及工作经历

2017 – 2020,加州伯克利大学,博士后
2012 – 2017,斯坦福大学,材料科学与工程,博士学位
2008 – 2012,北京大学,物理学,学士学位
主要研究方向
通过材料生长、器件设计和制备流程等层面的创新,结合多角度表征和定量模型分析方法,致力于解决前沿微纳电子器件的核心问题,推动高性能存储和传感技术的应用。研究重点包括:
·         高质量铪基铁电薄膜外延生长
·         FeFET铁电/半导体界面表征与优化
·         相变氧化物在存储和传感器件中的应用
研究概况
主要从事高K介电材料/半导体沟道界面优化,RRAM阻变原理表征与性能调控,以及基于金属-绝缘体相变材料的新器件等领域的研究工作。近几年以第一作者在Science Advances, Advanced Materials, Nano Letters, ACS Applied Materials & Interfaces等期刊发表学术论文,总论文数50余篇,google scholar总引用数2000余次,h因子18。在ACS Nano, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics等期刊审稿40余次。在美国申请两项专利,并以此于加州联合创办科技创业公司DeepRed Technology Inc。
本课题组长期招收博士后研究员、硕士/博士研究生、本科生,欢迎感兴趣的同学和年轻学者联系:tkch@pku.edu.cn
代表性论文
1.            K. Tang, K. Dong, C. J. Nicolai, Y. Li, J. Li, S. Lou, C.-W. Qiu, D. H. Raulet, J. Yao, J. Wu, Millikelvin-resolved ambient thermography. Science Advances 6, eabd8688 (2020).
2.            K. Tang, X. Wang, K. Dong, Y. Li, J. Li, B. Sun, X. Zhang, C. Dames, C. Qiu, J. Yao, J. Wu, A Thermal Radiation Modulation Platform by Emissivity Engineering with Graded Metal–Insulator Transition. Advanced Materials 32, 1907071 (2020).
3.            K. Tang, R. Droopad, P. C. McIntyre, Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects. Journal of Applied Physics 123, 025708 (2018).
4.            J. Park, J.-H. Kang, X. Liu, S. J. Maddox, K. Tang, P. C. McIntyre, S. R. Bank, M. L. Brongersma, Dynamic thermal emission control with InAs-based plasmonic metasurfaces. Science Advances 4, eaat3163 (2018).
5.            K. Tang, A. C. Meng, F. Hui, Y. Shi, T. Petach, C. Hitzman, A. L. Koh, D. Goldhaber-Gordon, M. Lanza, P. C. McIntyre, Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts. Nano Letters 17, 4390-4399 (2017).
6.            K. Tang, F. R. Palumbo, L. Zhang, R. Droopad, P. C. McIntyre, Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. ACS Applied Materials & Interfaces 9, 7819-7825 (2017).
7.            K. Tang, A. G. Scheuermann, L. Zhang, P. C. McIntyre, Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks. Journal of Applied Physics 122, 094503 (2017).
8.            K. Tang, A. C. Meng, R. Droopad, P. C. McIntyre, Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks. ACS Applied Materials & Interfaces 8, 30601-30607 (2016).
9.            A. G. Scheuermann, K. W. Kemp, K. Tang, D. Q. Lu, P. F. Satterthwaite, T. Ito, C. E. D. Chidsey, P. C. McIntyre, Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes. Energy & Environmental Science 9, 504-516 (2016).
10.          K. Tang, R. Winter, L. Zhang, R. Droopad, M. Eizenberg, P. C. McIntyre, Border trap reduction in Al2O3/InGaAs gate stacks. Applied Physics Letters 107, 202102 (2015).
11.          K. Tang, R. Droopad, P. C. McIntyre, (Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress. ECS Transactions 69, 53-60 (2015).
12.          K. Tang, Z. Y. Ni, Q. H. Liu, R. G. Quhe, Q. Y. Zheng, J. X. Zheng, R. X. Fei, Z. X. Gao, J. Lu, Electronic and transport properties of a biased multilayer hexagonal boron nitride. The European Physical Journal B 85, 301 (2012).
13.          K. Tang, R. Qin, J. Zhou, H. Qu, J. Zheng, R. Fei, H. Li, Q. Zheng, Z. Gao, J. Lu, Electric-Field-Induced Energy Gap in Few-Layer Graphene. The Journal of Physical Chemistry C 115, 9458-9464 (2011).